TRANSISTOR 342 G Search Results

transistor 342 G

Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

C67078-S3135-A2

Abstract: transistor 342 G BUZ342
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

Contextual Info: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n

buz 342 G

Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Contextual Info: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2

Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available

318F

Abstract: AN569 MMBT2131T1 MMBT2131T3
Contextual Info: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

AN569

Abstract: MMBT2131T1 MMBT2131T1G 318F
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available

Contextual Info: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.

bipolar junction transistor

Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Contextual Info: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.

marking code 346

Contextual Info: MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features 0.7 AMPERES 30 VOLTS − V BR CEO 342 mW • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

318F

Abstract: AN569 MMBT2132T1 MMBT2132T3 318F-03
Contextual Info: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value

smps tig welding

Abstract: transistor 342 G GA200SA60SP
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60SP

Abstract: GA200SA60S
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

MMBT2132T3

Abstract: 318F AN569 MMBT2132T3G
Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

GA200SA60SP

Abstract: smps tig welding transistor 342 G
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

MOTOROLA TRANSISTOR T2

Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
Contextual Info: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (T q = 25°C unless otherwise noted)

Contextual Info: b3E D 5bM220S GD0Da4S HAP 342 g7 MICROWAVE PULSED POWER TRANSISTOR PH1214-25L REV. NC 10/31/91 n/A-COfl P H M /A-COM PHI, INC. o DESIGN CHARACTERISTICS • • • • • 300 uS Pulse Operation Broadband 1.2 - 1 .4 GHz Operation Common Base Configuration

smd transistor 3d

Abstract: skiip gb 120 semikron skiip 1242 gb 120 TRANSISTOR 132-gd skiip 342 GD 120 314 CTVU 4d SMD Transistor skiip gd 120 semikron skiip 342 GDL semikron skiip 342 semikron skiip 3 gb 120
Contextual Info: Product Change Notification product group: SKiiP2 no.: 03/04 subject of change: Technical changes to SKiiP 2 with OCP SEMIKRON product type: Rev.: 01 Current Version of SKiiP 2 Updated Version of SKiiP 2 SKiiP 202 GD 061 – 357 CTV SKiiP 302 GD 061 – 359 CTV