TRANSISTOR 335 SMD Search Results

TRANSISTOR SMD MARKING CODE 352

Abstract: PBSS304ND PBSS304PD mosfet SMD MARKING CODE 352
Contextual Info: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 7 April 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 352

Abstract: PBSS304ND PBSS304PD
Contextual Info: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

p-channel mosfet with diode sot89

Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Contextual Info: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BUZ100

Abstract: to 220 smd BUZ100 SIEMENS
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package

SMD TRANSISTOR MARKING 5H

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS301NX PBSS301PX 6 pin TRANSISTOR SMD CODE 5H
Contextual Info: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

PBSS301NZ

Abstract: PBSS301PZ SC-73 TRANSISTOR SMD MARKING CODE 57
Contextual Info: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PBSS301NZ

Abstract: PBSS301PZ SC-73
Contextual Info: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 7 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

sot89 footprint

Abstract: PBSS301NX PBSS301PX SMD TRANSISTOR MARKING 5H
Contextual Info: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

C67078-S1348-A2

Contextual Info: BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

smd code A9 3 pin transistor

Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd transistor marking A5

Abstract: TRANSISTOR REPLACEMENT table for transistor PBSS4612PA
Contextual Info: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

smd transistor marking A6

Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
Contextual Info: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

TRANSISTOR SMD CODE 339

Abstract: smd zener diode code n0
Contextual Info: SIEMENS PROFET BTS430K2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • Clamp of negative voltage at output 50 Vbb-V o u t Avalanche Clamp Short-circuit protection Vbb operation 4.5 . . 32 Current limitation

TRANSISTOR SMD MARKING CODE 2s

Abstract: TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
Contextual Info: PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat BISS transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

PBSS4160DS

Abstract: PBHV8140Z PBLS2003D pbss4160dpn PBLS4004Y PBLS4003D PBLS2003S PBLS2021D PBSS4350Z, PBSS4350X, PBSS4350T PBSS4021NT
Contextual Info: The most efficient low VCEsat BISS transistors Experience best performance for on-state-resistance and switching times. Choose from NXP’s broad portfolio of energy and space saving products. Low VCEsat (BISS) transistors Product News : Fourth-generation technology

BPX81-4

Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
Contextual Info: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291

Contextual Info: SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

DNT04

Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA
Contextual Info: FEATURES Š High Efficiency: 93%@ 5Vin, 3.3V/5A out Š Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Š Standard footprint and pinout Š Resistor-based trim Š Output voltage programmable from 0.75V to 3.63V via external resistors