TRANSISTOR 306 X Search Results

SSM6J205FE

Contextual Info: SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ max (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V)

AM81214-060

Abstract: transistor a 726
Contextual Info: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network

w2a transistor

Abstract: EE-SPX406-W2A 306 transistor transistor w2a AWG22 EE-SPX302-W2A EE-SPX304-W2A EE-SPX305-W2A EE-SPX306-W2A EE-SPX402-W2A
Contextual Info: EE-SPX302/402/304/404/305/405/306/406-W2A Prewired Compact Sensing Head for Easy Mounting in Space-Confined Areas H Light modulation effectively reduces external light interference H Easy-to-use photomicrosensor with cable attached H Wide operating voltage range: 5 to

ALR015

Abstract: transistor code j6 ASI10511 transistor j6 306 transistor
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: ØE F G H MAXIMUM RATINGS IC 1.8 A VCC 32 V -65 °C to +250 °C TJ TSTG -65 °C to +200 °C θJC 4.0 °C/W CHARACTERISTICS R P DIM MINIMUM inches / mm MAXIMUM inches / mm A .095 / 2.41

XS830

Abstract: flux meter
Contextual Info: SIEMENS CMPNTSi OPTO 44E D m fi53b3Sb 0005223 b H S I E X SIE M E N S BPX43 SERIES PHOTOTRANSISTOR X _ 4 1 - 6 1 Package Dimensions in Inches mm .110 (2 .8) .11012.8) M axim um R a tin gs Operating and Storage Temperature (T„a,T J . -55’*C to +125H3

Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

BUK453-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNAT IO NAL b£E D m 711002b DDbMGMb N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and

MIL-G-5541C

Abstract: ALY Transistor MARKING transistor ALY 36 teledyne 175-5 transistor ALY 383 teledyne ALY TRANSISTOR teledyne transistor ALY MARKING ALY TRANSISTOR 40
Contextual Info: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC/PSA 2009 Series Features Description Pin Configuration • Low Distortion: IP 3 = +40 dBm Typ • • • • The 2009 Series is a thin-film GaAs FET RF amplifier for high output power and low noise

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

MO345

Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm 9.00±0.20 7.00±0.20 48 33 32 64 17 16 0.16+0.10 –0.05 • Operating supply voltage range: 1.5 V to 7.2 V • High precision reference voltage circuit built-in ±1%

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

AM80814-005

Abstract: t80-75
Contextual Info: AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.0 W MIN. WITH 8.5 dB GAIN

Contextual Info: MOTOROLA Order this document by MTB1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E -F E T MTB1306 High Density Power FET D2PAK for Surface Mount TM OS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: TO SH IBA TENTATIVE SSM6K08FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII S S M 6 K 8 F U HIGH SPEED SWITCHING APPLICATIONS Small Package Low on Resistance : Ron - 105 m il max. (@Vq s = 4 V) : Ron = 140 mO max. (@V>*g = 2.5 V) • High-Speed Switching

SSM6P28TU

Contextual Info: SSM6P28TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Unit: mm 2.1±0.1 Rating Drain-source voltage VDS −20

smd transistor code 314

Abstract: 41282 bts BTS 308 731 zener diode BTS 307 E3062A BTS412B BB 313 BTS 305 GI 312 diode POWER SUPPLY BTS SIEMENS
Contextual Info: • fl235b05 0081444 5T1 SIEM EN S PROFET B TS 412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

NSBC144WDP6

Abstract: NSBC123TDP6
Contextual Info: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

NSBA123TDP6

Contextual Info: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

Halbleiterbauelemente DDR

Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
Contextual Info: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.

switching with IRFP450 schematic

Abstract: power switching with IRFP450 schematic IRFP450 STE36N50 LD36A GC54800
Contextual Info: SGS-THOMSON STE36N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE Voss R o S o n to STE36N50 500 V < 0.14 £! 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . {SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

Contextual Info: NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com MARKING DIAGRAM This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor