TRANSISTOR 3005 2 Search Results

transistor 30054

Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Contextual Info: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications

transistor 3005

Contextual Info: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

MP1470

Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
Contextual Info: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34

ITT ccu 3000 i

Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

Contextual Info: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer

transistor buv 90

Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
Contextual Info: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

PS2501 optocoupler

Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
Contextual Info: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar

KEP65

Abstract: KP65
Contextual Info: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC

transistor smd hq

Contextual Info: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which

DIM800ECM33-F000

Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*

DIM1200ESM33-F000

Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS

m 1305

Abstract: Marking D1c MC10EP101 MC10EP101FA MC10EP101FAR2 D1C marking ep101 transistor 3005 2
Contextual Info: MC10EP101 Quad 4-Input OR/NOR The MC10EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the fastest AC performance available. All VCC and VEE pins must be

Contextual Info: MC10EP29, MC100EP29 3.3V / 5V ECL Dual Differential Data and Clock D Flip-Flop With Set and Reset http://onsemi.com Description The MC10/100EP29 is a dual master−slave flip−flop. The device features fully differential Data and Clock inputs as well as outputs.

H8/3005

Abstract: HD6413004F HD6413004TE HD6413004VF HD6413004VTE HD6413005F HD6413005VF OMC952723089
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: MC10EP139, MC100EP139 3.3V / 5V ECL ÷2/4, ÷4/5/6 Clock Generation Chip Description The MC10/100EP139 is a low skew ÷2/4, ÷4/5/6 clock generation chip designed explicitly for low skew clock generation applications. The internal dividers are synchronous to each other, therefore, the common

NE644

Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors

2N1358

Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Contextual Info: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments

KEP65

Abstract: MC100EP16VB
Contextual Info: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain Description The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC

Contextual Info: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain Description The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

Contextual Info: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output Description http://onsemi.com MARKING DIAGRAMS* 8 1 SOIC−8 D SUFFIX CASE 751 1 TSSOP−8 DT SUFFIX CASE 948R 8 KEP66 ALYW G 1 8 8 1 KP66 ALYWG G DFN8 MN SUFFIX

KEP66

Abstract: MC100EP16VC
Contextual Info: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output Description http://onsemi.com MARKING DIAGRAMS* 8 1 SOIC−8 D SUFFIX CASE 751 1 TSSOP−8 DT SUFFIX CASE 948R 8 KEP66 ALYW G 1 8 8 1 KP66 ALYWG G DFN8 MN SUFFIX CASE 506AA

2SA800

Abstract: NE59300 NE59335 ci 4081 NE AND micro-X NE593 NE59312 NE59333 NE734 C-48Hrs
Contextual Info: N E C / DE bMS7414 30 C A L IF O R N IA 64 27 41 4 N E C/ CAL IFO RNIA DODQISB 0 |~~ 30C 00 15 3 07^3/-/*^ MICROWAVE TRANSISTOR SERIES FEATURES DESCRIPTION AND APPLICATIONS T he N E 5 9 3 Series of PNP silicon general purpose U H F tran­ sistors provide the designer w ith a wide selection of reliable