TRANSISTOR 2XW Search Results
TRANSISTOR 2XW Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR 2XW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The |
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BLP15M7160P | |
Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The |
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BLP15M7160P | |
Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. |
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BLF644P | |
Contextual Info: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The |
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BLF647PS | |
Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 1 — 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent |
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BLF644P | |
Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 1 — 17 August 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. |
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BLF8G27LS-100V | |
BLC8G27LS-160AV
Abstract: BLC8G27LS sot1275
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BLC8G27LS-160AV BLC8G27LS-160AV BLC8G27LS sot1275 | |
TRANSISTOR CW 7805Contextual Info: BLF8G10LS-300P Power LDMOS transistor Rev. 2 — 17 December 2013 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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BLF8G10LS-300P TRANSISTOR CW 7805 | |
Contextual Info: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz. |
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BLC8G27LS-100AV | |
Contextual Info: BLP7G07S-140P Power LDMOS transistor Rev. 2 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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BLP7G07S-140P | |
Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. |
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BLF8G27LS-100V | |
Contextual Info: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. |
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BLF8G38LS-75V | |
Contextual Info: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. |
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BLC8G27LS-180AV | |
Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. |
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BLF8G20LS-230V | |
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Contextual Info: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. |
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BLF8G20LS-200V | |
Contextual Info: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. |
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BLF8G38LS-75V | |
Contextual Info: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. |
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BLC8G27LS-240AV | |
Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. |
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BLF8G27LS-100V | |
Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 1 — 20 January 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. |
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BLP10H610 2002/95/EC, | |
Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. |
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BLF8G20LS-230V | |
Contextual Info: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. |
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BLF8G20LS-160V | |
Contextual Info: BLF8G10LS-160V Power LDMOS transistor Rev. 2 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. |
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BLF8G10LS-160V | |
Contextual Info: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. |
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BLP10H610 | |
Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. |
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BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW |