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    TRANSISTOR 2SK 70 Search Results

    TRANSISTOR 2SK 70 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR 2SK 70 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S


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    2SK703 PDF

    L713

    Contextual Info: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS


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    100nA L713 PDF

    2SK1581

    Abstract: FET MARKING TC-2296A
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK 1581 N -C H A N N E L M O S FET FOR S W IT C H IN G The 2SK1581, N-channel vertical typ e MOS FET, can be driven by PACKAGE DIMENSIONS Unit : mm 2.5 V power supply. 2.8± 0.2 <-•O do +l Ò 1.5 As the MOS FET is driven by low voltage and does not require con­


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    2SK1581 2SK1581, 2SK1581 FET MARKING TC-2296A PDF

    DIODE IN 4002 424

    Abstract: transistor 2sk c954 2SK2541 TI 945 nec 501 t Transistor DF- RO
    Contextual Info: =t — • 5 > 2 / - h MOS Field Effect Transistor 2SK2541 n ^ - v t ^ u m o s ¡ ü iâ x - 'f > y ^ < f e t 7 ' m 2SK 2541IÌ 1.5 V l E t t ^ 'f 7 “<7 N 51 + ^^iÉ M O S FET?'<feU, f£ 1 Œ ?'![*»)?' t , *'0 K 7 ' f 7 f S ? f l t 3 *s' * ^ o jg h 7 > v


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    2SK2541 2SK2541 DIODE IN 4002 424 transistor 2sk c954 TI 945 nec 501 t Transistor DF- RO PDF

    TC-7606

    Abstract: 2SK1283
    Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to


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    2SK1283 2SK1283 TC-7606 PDF

    2SK150

    Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
    Contextual Info: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/


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    2SK15) 2SK11) 2SK12, 3800iiu 3800/tU 2SK12 3SK15 2SK12) 10kfl) 2SK150 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065 PDF

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17 PDF

    2SK1287

    Abstract: MEI-1202 TEA-1035
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION


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    2SK1287 2SK1287 MEI-1202 TEA-1035 PDF

    3sk fet

    Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
    Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM


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    362TM 383TM 2SC388ATM 400MIN 2SC4317 2SC4322 3sk fet transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type PDF

    2sj2 high voltage p channel mosfet

    Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
    Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF

    transistor 2sk 70

    Abstract: 2SK2610
    Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2610 DATA SILICON N CHANNEL MOS TYPE /T-MOSIII (2SK2610) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


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    2SK2610 2SK2610) 2SK2610- 2SK2610 transistor 2sk 70 PDF

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


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    2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846 PDF

    2SK1497

    Abstract: 2SK1498 MEI-1202 TEA-1035 pw-2n n90
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET N E C .r •a- A- aft* - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498


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    2SK1497/2SK1498 2SK1497/2SK1498 IEI-1209) 2SK1497 2SK1498 MEI-1202 TEA-1035 pw-2n n90 PDF

    NEC 2505

    Abstract: 2sk2372 transistor 2sk 70 2sk2371 transistor 2sk transistor+2sk
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Charmel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.


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    2SK2371/2SK2372 2SK2371/2SK2372 2SK2367: 2SK2368: 2SK2371/2SK2372) NEC 2505 2sk2372 transistor 2sk 70 2sk2371 transistor 2sk transistor+2sk PDF

    2SC4927

    Abstract: 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC2611 2SC4896 TO-22OAB 2SB566 2SB566A
    Contextual Info: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology


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    2SC26U 2SC4828 2SC2611 2SK296 2SK296 2SD2299 2SC4927 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC4896 TO-22OAB 2SB566 2SB566A PDF

    Contextual Info: TOSHIBA 2SK2312 Field Effect Transistor Silicon N Channel MOS Type L2-7t-MOS V High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance - R DS(ON) = 13m£2 (Typ.)


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    2SK2312 PDF

    Transistor AND DIODE Equivalent list

    Abstract: Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk 2SK1078 TD62783 equivalent TD62783 TD62504 equivalent pnp DARLINGTON TRANSISTOR ARRAY
    Contextual Info: [ 2 ] Product List [ 2 ] Product List 1. S-Drivers new product (9 series, 9 devices) TD62 S X X X A FM Package Output withstand voltage (A: 50 V) Input H/L (odd number: Low) Output current (0.5 A/0.1 A) 0: Sink current output 3: Source current output 6: Push-pull output


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    2SA1203 HSOP16 TD62M8604AF 2SA1680 Transistor AND DIODE Equivalent list Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk 2SK1078 TD62783 equivalent TD62783 TD62504 equivalent pnp DARLINGTON TRANSISTOR ARRAY PDF

    2SK680A

    Abstract: TC-7831B
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING


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    2SK680A 2SK680A, 2SK680A TC-7831B PDF

    K1496

    Abstract: 2SK1495 K1495 2SK1496 2SK149 1496-Z tea 1037 2SK1495-Z 2SK1496-Z K1494
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1495,2SK1495-Z/2SK1496,2SK1496-Z SWITCHING


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    2SK1495 2SK1495-Z/2SK1496 2SK1496-Z 2SK1496 2SK1495-Z, 2SK1496-Z 2SK1495/2SK1496 K1496 K1495 2SK1496 2SK149 1496-Z tea 1037 2SK1495-Z K1494 PDF

    2SJ56 2sk176

    Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
    Contextual Info: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical


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    2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application PDF

    transistor 2sk 11

    Abstract: 2sk1363
    Contextual Info: TOSHIBA 2SK1363 Field Effect Transistor U n it in m m Silicon N Channel MOS Type n-MOS 11.5 15.8 ± 0 -5 gf 3.6 ± 0 .2 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' F*ds(on) = 1-1Q (Typ.) • High Forward Transfer Admittance


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    2SK1363 300nA transistor 2sk 11 2sk1363 PDF

    K356

    Abstract: gti TRANSISTOR 2SK356
    Contextual Info: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


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    2SK356 K356 gti TRANSISTOR 2SK356 PDF

    2SK1271

    Abstract: MEI-1202 TEA-1035
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET


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    2SK1271 2SK1271 MEI-1202 TEA-1035 PDF

    2SK2038

    Abstract: Transistor TOSHIBA 2SK
    Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)


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    2SK2038 DRAI11 2SK2038 Transistor TOSHIBA 2SK PDF