TRANSISTOR 2SC3052 Search Results

TRANSISTOR 2SC3052 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2SC3052 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1235A Abstract: RT3WLMM 100HZ 2SC3052 Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent.	Original	2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ	PDF
2SC3052 Abstract: RT3CLLM Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.	Original	2SC3052 SC-88 JEITASC-88 RT3CLLM	PDF
2SC3052 Abstract: RT2C00M Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2C00M is a composite transistor built with two 2SC3052 chips in SC-88 package. FEATURE ●Silicon npn epitaxial type Each transistor elements are independent.	Original	RT2C00M RT2C00M 2SC3052 SC-88 25Tr1Tr2	PDF
2SC3052 Abstract: RT2C00M Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.	Original	RT2C00M SC-88 RT2C00M 2SC3052	PDF
2sc3052 Abstract: MARKING HRA MARKING XL Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.	OCR Scan	2SC3052 2SC3052 100mA, 270Hz MARKING HRA MARKING XL	PDF
RT3WLMM Abstract: 2SA1235A 100HZ 2SC3052 Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3WLMM is compound transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type	Original	2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ 2SC3052	PDF
2SC3052 Abstract: transistor 2sc3052 2sc3052 if Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.	Original	2SC3052 2SC3052 100mA JEITASC-59 O-236 transistor 2sc3052 2sc3052 if	PDF
2SC3052 Contextual Info: RECTRON 2SC3052 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range	Original	2SC3052 OT-23 OT-23 MIL-STD-202E 2SC3052	PDF
2sc3052 Abstract: 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E Contextual Info: 2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage	Original	2SC3052 OT-23 100mA, 2SC3052-E 2SC3052-F 2SC3052-G 2sc3052 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain	Original	OT-23 OT-23 2SC3052 100mA 100mA,	PDF
sot-23 Marking Lf Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf Contextual Info: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SC3052 OT-23 100mA 100mA, sot-23 Marking Lf transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf	PDF
2sc3052 Abstract: sot-23 Marking LG Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain	Original	OT-23 OT-23 2SC3052 100mA 100mA, 2sc3052 sot-23 Marking LG	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC3052 TRANSISTOR（NPN ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM: 0.2 A Collector-base voltage	Original	OT-23 2SC3052 037TPY 950TPY 550REF 022REF	PDF
sot-23 Marking Lf Abstract: sot-23 Marking LG 2sc3052 MARKING LG Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃	Original	OT-23 OT-23 2SC3052 100mA, sot-23 Marking Lf sot-23 Marking LG 2sc3052 MARKING LG	PDF

2sc3052 Abstract: h 125 tam MARKING lf npn sot-23 Marking LG Transistor hFE CLASSIFICATION Marking CE 2800B Contextual Info: 2SC3052 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR A L 1.BASE 3 2.EMITTER FEATURES n n n B S Top View 1 Excellent linearity of DC forward current gain 2 V G RoHS Compliant Product	Original	2SC3052 OT-23 100mA, 01-Jun-2002 2sc3052 h 125 tam MARKING lf npn sot-23 Marking LG Transistor hFE CLASSIFICATION Marking CE 2800B	PDF
lg smd transistor LF Abstract: lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF Contextual Info: Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05	Original	2SC3052 OT-23 100mA lg smd transistor LF lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF	PDF
2sc3052 Abstract: MARKING lf npn Contextual Info: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35	Original	2SC3052 OT-23-3L 100mA, 2sc3052 MARKING lf npn	PDF
Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range	Original	OT-23-3L 2SC3052 OT-23-3L 100mA,	PDF
marking CODE n3 6PIN Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 Contextual Info: ２０１０年３月版 Sales Guide セールスガイド小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2	Original	2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7	PDF
2SC5804 Abstract: isahaya 2SC3052 ISC5804AT2 NPN transistor 1211 Contextual Info: 〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE 2SC5804 is a super mini package resin sealed DRAWING Unit：ｍｍ silicon NPN epitaxial transistor, It is designed for low frequency application. 1.21±0.1	Original	ISC5804AT2 2SC5804 2SC3052. 100mA/IB isahaya 2SC3052 ISC5804AT2 NPN transistor 1211	PDF
2SC5804 Abstract: TRANSISTOR 2sc5804 2SC3052 Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5804 is a super mini package resin sealed	Original	2SC5804 2SC5804 2SC3052. TRANSISTOR 2sc5804 2SC3052	PDF
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C	PDF
2SC3928A Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989 Contextual Info: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100	OCR Scan		PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF

TRANSISTOR 2SC3052 Search Results

TRANSISTOR 2SC3052 Result Highlights (5)

TRANSISTOR 2SC3052 Datasheets Context Search

2SA1235A

2SC3052

2SC3052

2SC3052

2sc3052

RT3WLMM

2SC3052

2SC3052

2sc3052

sot-23 Marking Lf

2sc3052

sot-23 Marking Lf

2sc3052

lg smd transistor LF

2sc3052

marking CODE n3 6PIN

2SC5804

2SC5804

RTIP144C

2SC3928A

Q2N4401