TRANSISTOR 2SB Search Results

2SD2449

Abstract: 2-21F1A 2SB1594
Contextual Info: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics

2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

2SB564

Abstract: 2SB564, transistor
Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SB775

Abstract: 2SD895
Contextual Info: O rd e rin g n u m b e r :EN 679F 2SB775/2SD895 No.679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor SANTO i 85V/6A, AF 35W Output Applications F eatu re s • Wide ASO because of on-chip ballast resistance.

2SB817P

Abstract: 2SD1047P ITO2169
Contextual Info: Ordering number: ENN6572 2SB 817P : PN P Epitaxial Planar Silicon Transistor 2 S D 1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P Is a H Y O i 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Inter­

FP-108-1

Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Contextual Info: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

marking 105

Abstract: 2SB1123 FP105 2088a
Contextual Info: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

transistor 2SB1201

Abstract: transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250
Contextual Info: T P T i n y Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possibleto make electronic equipment smaller and slimmer.

C4106 transistor

Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
Contextual Info: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower

transistor B1202

Abstract: b1202 t b1202 transistor B1202 S 23 b1202 TO-252 D1802 b1202 transistor 2SB1202ST 2SD1802T-TL-E 2sb1202t-tl-e
Contextual Info: 2SB1202/2SD1802 Ordering number : EN2113D SANYO Semiconductors DATA SHEET 2SB1202/2SD1802 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

2sb863 transistor

Abstract: 2sb863 2sd1148
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB863 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications

1C00

Abstract: 2SB1127
Contextual Info: Ordering number: EN2452 2SB1127 PNP Epitaxial Planar Silicon Transistor 20V/5A Swtching Applications Applications * Strobe, power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low saturation voltage . Large current capacity

2SB1189

Abstract: 2SB1238 2SD1767 2SD1859 T100
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2SB1140

Abstract: 2069A
Contextual Info: Ordering number:2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042A Features [2SB1140] · Adoption of FBET, MBIT processes.

2SB859

Abstract: 2SD1135
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB859 DESCRIPTION •Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -2.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1135

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SB1127

Abstract: 1C00 hj30
Contextual Info: Ordering number; EN2452 2SB1127 No.2452 PNP Epitaxial Planar Silicon Transistor 20V/5A Swtching Applications Applications . Strobe, power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low saturation voltage . Large current capacity

no291

Abstract: 2SB1395
Contextual Info: Ordering number:EN2910 PNP Epitaxial Planar Silicon Transistor 2SB1395 DC-DC Converter, Motor Driver Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. unit:mm

TRANSISTOR 2sb546

Abstract: 2SB546 416W 2SD401
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB546 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V (Min) ·Collector Power Dissipation: PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD401 APPLICATIONS

2SB1294

Abstract: 2SD1897
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1897

2SB829

Abstract: 2SD1065
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB829 DESCRIPTION •High Collector Current: IC= -15A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065

2SB943

Abstract: 2SD1268
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB943 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1268 APPLICATIONS ·Designed for power switching applications.

2SB1290

Abstract: 2SD1833 TRANSISTOR 2SD1833
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833