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    TRANSISTOR 2A Search Results

    TRANSISTOR 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    		Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MLP832

    Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
    Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a PDF

    2SA1786

    Abstract: 2SC4646 35123 2SC4646E
    Contextual Info: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		EN3512B 2SA1786 2SC4646 2SA1786/2SC4646 VCEO400V) 2SA1786/2SC4646] 2SA1786 2SC4646 35123 2SC4646E PDF

    NES6294Z

    Contextual Info: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors


    OCR Scan     		NES6294Z NES6294Z PDF

    TEA2261

    Abstract: TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170
    Contextual Info: TEA2260 TEA2261 SWITCH MODE POWER SUPPLY CONTROLLER . . . . . . . POSITIVE AND NEGATIVE CURRENT UP TO 1.2A and – 2A LOW START-UP CURRENT DIRECT DRIVE OF THE POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMITATION DOUBLE PULSE SUPPRESSION SOFT-STARTING


    Original     		TEA2260 TEA2261 TEA2260/61 TEA2261 TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170 PDF

    NSG2555

    Abstract: TRANSISTOR T4
    Contextual Info: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors


    OCR Scan     		NSG2555 NSG2555 TRANSISTOR T4 PDF

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn PDF

    UN1518

    Abstract: UN1518L-AE3-R UN1518G-AE3-R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) „ ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R


    Original     		UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518L-AE3-R UN1518G-AE3-R PDF

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


    Original     		BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG PDF

    QCA150A60

    Abstract: QBB150A60 high power transistor module QBB150A40 QCA150A QCA150A40
    Contextual Info: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlington power transistor module with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA150A Series-connected type


    Original     		QCA150A/QBB150A40/60 E76102 QCA150A QBB150A 400/600V QCA150A40 QCA150A60 QBB150A40 QCA150A60 QBB150A60 high power transistor module PDF

    4124DL

    Abstract: 4124dl power transistor
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high


    Original     		4124D 4124D 4124DL-T92-B 4124DG-T92-B 4124DL-T92-K 4124DG-T92-K 4124DL-T92-R 4124DG-T92-R 4124DL-T60-K 4124DL 4124dl power transistor PDF

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Contextual Info: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver PDF

    MLP832

    Abstract: ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC
    Contextual Info: ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		ZXTDB2M832 MLP832 ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC PDF

    tea2261

    Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV
    Contextual Info: TEA2261/0 SWITCH MODE POWER SUPPLY CONTROLLER Positive and Negative Current up to 1.2A and 2A • Low Start-Up Current ■ Direct Drive of the Power Transistor ■ Two Levels Transistor Current Limitation ■ Double Pulse Suppression ■ Soft-Starting ■ Under and Overvoltage Lock-out


    Original     		TEA2261/0 TEA2260/61 tea2261 TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV PDF

    BUH51

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Contextual Info: ON Semiconductort BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    30054

    Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438
    Contextual Info: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold


    Original     		PDF

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES


    Original     		E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 PDF

    NTE124

    Abstract: 325V
    Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,


    Original     		NTE124 NTE124 100mA 10MHz 250mA, 100mA, 10MHz, 100kHz 325V PDF

    358 SMD transistor

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor PDF

    HMPS650

    Abstract: audio transistor
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6327-B HMPS650 HMPS650 audio transistor PDF

    stc403

    Abstract: transistor marking MH STC403 TO-220F
    Contextual Info: STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. STC403 Marking STC403 Package Code TO-220F


    Original     		STC403 O-220F KST-H001-001 stc403 transistor marking MH STC403 TO-220F PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


    Original     		MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1 PDF

    FJE5304D

    Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		FJE5304D FJE5304D O-126 PDF