TRANSISTOR 2395 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2305 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2395 transistor

Contextual Info: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

j350 TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.

2395 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

TRANSISTOR J477

Abstract: J890
Contextual Info: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

j292

Abstract: aft23h200-4s2l
Contextual Info: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N6438

Contextual Info: ISCFdÈ Lûó Lûó text/html About News keyword search: Contact Employment Site Home part number search: 2N6438 #23954 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating

FPD200 DIE

Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,

FPD200

Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

transistor D 2395

Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

JANTX2N6438

Contextual Info: ISCFdȉ ¬ „‰ ¬ „ text/html About News keyword search: Package Division Lawrence Datasheet none Mil-Spec Shipping Features MIL-PRF-19500/5 (none) Qual Data Contact Microsemi ? Home RFQ/Sample PNP Transistor ? Employment Site part number search:

transistor D 2395

Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter.

Contextual Info: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power