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    TRANSISTOR 239 Search Results

    TRANSISTOR 239 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR 239 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    BUJ103AX

    Abstract: BP317 BU1706AX
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX PDF

    BP317

    Abstract: BU1706AX BUJ204AX
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


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    BUJ103A O220AB SCA60 135104/240/02/pp12 PDF

    BUJ204A

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


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    BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A PDF

    shd4324

    Contextual Info: SENSITRON SEMICONDUCTOR SHD432104 TECHNICAL DATA DATA SHEET 239, REV – Formerly part number SHD4324 SMALL SIGNAL TRANSISTOR DESCRIPTION: DUAL NPN SMALL SIGNAL TRANSISTOR IN A SURFACE CERAMIC LCC-6 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .


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    SHD4324 SHD432104 shd4324 PDF

    2SC5005

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5005 2SC5005 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2 PDF

    2sc4571

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 4570-T PACK878 PDF

    transistor 1211

    Abstract: transistor su 312 transistor zo 109
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5005 2SC5005 Collect69 transistor 1211 transistor su 312 transistor zo 109 PDF

    Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


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    NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516 PDF

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607 PDF

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 PDF

    Contextual Info: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


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    BUH150 BUH150 PDF

    AF239

    Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
    Contextual Info: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz


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    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


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    NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    2SC2352

    Abstract: z239
    Contextual Info: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.


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    2SC2352 2SC2352 11-i-- z239 PDF

    transistor D 2394

    Contextual Info: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT


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    AT-41411 OT-143 5965-0276E 5989-2646EN transistor D 2394 PDF

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460 PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N PDF