TRANSISTOR 237 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high

high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

transistor sd1451

Abstract: SD1451 SD1451-1 microwave transistor
Contextual Info: S G S-THOMSGN QMC 0 | 712^237 O G G G Q ? 1! £ | 1 ° SOLID STATE MICROWAVE ] ! SD1451-1 THOMSON-CSF COMPONENTS CORPORATION [ Montgomeryvilter PA18936 • 215 3 62-8500 ,■ TWX 510-661-7299 , - . î j FM COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1451-1 is a 12.5 volt epitaxial silicon NPN planar transistor

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

118-136-MHz

Abstract: 118-136 mhz
Contextual Info: □ MC D I S G S-THOMSON □ D G 010G 7^237 7^33 ~ ° 7 Ü IE?;' *5 '•-’I ' •-> ' \ f :lÿjgj%bmeÿvjiÿB, P/yjB936^^^ VHF COMMUNICATIONS TRANSISTOR DESCRIPTION 230 The SD1013-3 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 volt AM class C rf amplifiers functional in the

BUK444-600B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

SMD HF transistor

Abstract: BLF202 M3D175
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain PIN • Easy power control

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

S0692

Contextual Info: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

56590653B

Abstract: BH Rf transistor
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON

TEA2019

Abstract: NTCC TEA2018A ic 810 pin diagram
Contextual Info: SGS-THOMSON TEA2019 I CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: fZ J SGS-THOMSON ^7# R L ie r a « B S S 6 4 SMALL SIGNAL NPN TRANSISTOR Type M arking BSS64 U3 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE LOW FREQUENCY APPLICATIONS

BUY49P

Abstract: 6Bs transistor SGS Transistor sc06960 0118 transistor Transistor 78 L 05 7R2R237
Contextual Info: r z 7 SCS-1H0 MS0 N ^ 7# Rsiisæii[Liieî^ iiiei BUY49P SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUY49P is a silicon epitaxial planar NPN transistor in jedec SOT-32 plastic package. It is used in high-current switching applications up to

BDY58

Contextual Info: /= 7 ^ 7# S G S -T H O M S O N m » i i u i c t i i ] i 58_ B D Y 5 8 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY58 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case. It is intended

60V transistor npn 1a

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V

BD234

Abstract: bd238 bd238 equivalent BD236
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit - 45 V : BD236 - 60 V : BD238

2N6729

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6729 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector -Base Voltage

TRANSISTOR 2N6727

Abstract: 2N6727
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6727 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage