TRANSISTOR 23 Search Results

2N3904

Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
Contextual Info: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with

2n3904 transistor

Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
Contextual Info: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with

2n3906 equivalent transistor

Abstract: 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain
Contextual Info: 2N3906 TRANSISTOR PNP PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with

Contextual Info: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with

2FK transistor

Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

Contextual Info: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value

2tk transistor

Contextual Info: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

Contextual Info: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

MMBT3904LT1

Abstract: MMBT3906LT1
Contextual Info: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW

BC849LT1

Contextual Info: BC859LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the BC849LT1 is recommended. NPN transistor SOT-23 Plastic Package

2GM sot-23 transistor

Abstract: transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES t PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. t As complementary type, the NPN transistor MMBTA06 is recommended. t This transistor is also available in the

Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage

BC849

Abstract: BC859
Contextual Info: BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package

STD123ASF

Contextual Info: STD123ASF NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. PIN Connection 3 1 2 SOT-23F Ordering Information

2SC5343

Contextual Info: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. 2.9±0.2 GENERAL PURPOSE TRANSISTOR

BARE die

Contextual Info: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Contextual Info: MMBTSB1198 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: MMBTSB1197 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: MMBTSD1781 NPN Silicon Epitaxial Planar Transistor Medium Power Transistor The transistor is subdivided into two group Q and R according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 C O Parameter Symbol Value Unit Collector Base Voltage

BC849LT1

Contextual Info: BC859LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the BC849LT1 is recommended. NPN transistor SOT-23 Plastic Package