TRANSISTOR 222 A Search Results

2sd1222 equivalent

Abstract: 2SB907 2SD1222
Contextual Info: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •

Contextual Info: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)

National "Audio Handbook"

Abstract: PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp
Contextual Info: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1222 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h^E (1) = 2000 (Min.)

Contextual Info: TOSHIBA 2SD1222 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 222 SWITCHING APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX. (A) 5.2 ±0.2 c PO W ER AM PLIFIER APPLICATIONS 0.6 i 0.15 • High DC Current Gain

BLY88C

Abstract: lyp 809 BLY88 SOT122A TRANSISTOR 2X5
Contextual Info: 711005b DQbBSÔT TIS « P H I N bSE D BLY88C/01 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V . The transistor is resistance stabilized and is

OMRON CPU OCH

Abstract: CQM1-CIF02 Cif01 omron cpm1 CPM1A-MAD01 OMRON CQM1 och CPM1-C1F01 c200h-pr027 CQM1-CIF02 rs232 cpm1-cif11
Contextual Info: PLC-System SYSMAC CPM1/CPM1A Allmänt Kom paktstyrningarna i serie C PM 1/CPM 1A bestär av CPU:n med 10, 20, 30 och 40 digitala in - och utgängar. Genom att ansluta upp tili tre utbyggnadsgrupper med vardera 20 in - och utgängar kan ett system med m aximalt 90 in - och utgängar CPM 1 respektive 100 in - och

pnp phototransistor

Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
Contextual Info: A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Robert Stuart, CEL Product Marketing Manager Hardik Bhavsar, San Jose State University Introduction A standard optocoupler provides signal transfer between

cpu 222

Abstract: cpu 222 siemens siemens S7-200 cpu 222 S7-200 cpu 222 VDE 0660 TEIL 200 s7-200 em 222 s7 200 cpu 222 OPTOKOPPLER VDE S7-300 cpu 222 TD-200 siemens
Contextual Info: CPU 222 Seite 1 von 7 Zentralbaugruppen CPU 222 Technische Daten CPU 222 Programmspeicher 4 KByte /typ. 1,3 K Anweisungen Datenspeicher 1024 Wörter Speichermodul optional 1 steckbares Speichermodul; Inhalt identisch mit integriertem EEPROM Pufferung des Programms gesamtes Programm wartungsfrei im

8XXXT

Abstract: pml 017 PMH5718T PMH5718 pmh5
Contextual Info: Application Note 205 Basic features of POLA compatible POL DC/DC regulators Introduction The POLA point-of-load-alliance standard products ensure compatible footprint, interoperability and true second sourcing for customer design flexibility. The POLA compatible product families of non-isolated, wide output

Contextual Info: SIEMENS FE A T U R E S IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches mm • High Current Transfer Ratio«, lF=1 mA, IL221,100% Minimum IL222,200% Minimum IL223,500% Minimum • Withstand Test VoRage, 2500 VRMS

Avantek uto 512

Abstract: utc 222 Avantek amplifier UTC UTC 494 AVANTEK AVANTEK utc Avantek, Inc
Contextual Info: AVANTEK INC MME @AVANTEK imiHbfc. 0 007 ^43 b 5 ¡AVA • I * UTO/UTC 222 Series Thin-Flim Cascadable Amplifier Module 20 to 200 MHz FEATURES APPLICATIONS • • • • • • • High Gain IF Stages Frequency Range: 20 to 200 MHz High Gain: 29.5 dB Typ

transistor b54

Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)

transistor K 1096

Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized

20-PIN

Abstract: LR36685 RJ21P3AA0PT Q455 SMR 56-7
Contextual Info: BACK RJ21P3AA0PT 1/1.8-type Interline Color CCD Area Sensor with 3 370 k Pixels RJ21P3AA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21P3AA0PT is a 1/1.8-type (8.93 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

BLV36

Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
Contextual Info: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or

Contextual Info: WhHì H E W L E T T AUHM PA C K A R D Avantek Products Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade

BLV37

Contextual Info: i, fine. £s.rtii-Con 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV37 VHP PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor primarily intended for use in VHP broadcast

PSMN030-150P

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

100MA 45 V NPN

Abstract: fzt690b Siren DSA003713
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B TYPICAL CHARACTERISTICS 0.8 - Volts - (Volts) IC/IB=10 0.6 0.4 0.6 V V 0.01 0.1 1 10 VCE(sat) v IC VCE=2V 1.2 1.0 1K 0.8 0.6 IC/IB=100 1.2 1.0 h V 0.6 h 0.4 0.2 0.01 0.1 10 1 1.6 0.01 0.1 1 I+ - Collector Current (Amps)

Contextual Info: I ObE D N AMER PHILIPS/DISCRETE • DQ15D7^ 4 ■ MAINTENANCE TYPE PKB3001U (for new design use PTB32001X J V _ T 33 -os MICROW AVE POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2

Contextual Info: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2

Contextual Info: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER S O T -2 3 • HIGH Gee Typi 23dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation