TRANSISTOR 220 Search Results

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

Contextual Info: UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-220

Contextual Info: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220

NPN Transistor 5A 400V

Abstract: utc High Voltage Switching Transistor planar transistor
Contextual Info: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE

f tip42c

Abstract: TIP42C
Contextual Info: UTC TIP42C PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip41C TO-220 1:BASE

OF TRANSISTOR tip122

Abstract: PT 10000
Contextual Info: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

Contextual Info: UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

BU406 SGS

Abstract: china tv schematic diagram BU406 transistor BU406
Contextual Info: BU406 SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV ■ 3 1 DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package.

PH1214-220M

Abstract: Radar transistor 220
Contextual Info: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

Contextual Info: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation TA=25°C Junction Temperature Storage Temperature

Contextual Info: BD241CFP NPN SILICON POWER TRANSISTOR . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION U.L. COMPLIANT APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN transistor mounted in TO-220FP fully molded

Contextual Info: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2

stc403

Abstract: transistor marking MH STC403 TO-220F
Contextual Info: STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. STC403 Marking STC403 Package Code TO-220F

Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

2sk3715

Abstract: D1637
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3715 Isolated TO-220

TO-220FN

Contextual Info: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box

CSB507

Abstract: CSD313
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507 CSD313 CSB507, CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION

morocco tip32c

Abstract: TIP32C malaysia tip32c TIP31c PNP Transistor st 393 JESD97 TIP31C
Contextual Info: TIP32C Power transistor Applications • . Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications.

Contextual Info: UTC TIP107 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. FEATURE *Low VCE sat *High current gain *Complementary to TIP102 1 TO-220 1:BASE

MJE2955T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252  ORDERING INFORMATION Ordering Number Lead Free

2SK3793

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3793 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3793 Isolated TO-220

2SD1409

Abstract: DARLINGTON 3A 100V npn
Contextual Info: 2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER

D1561

Abstract: 2SK3511 2SK3511-S 2SK3511-Z 2SK3511-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3511 TO-220AB designed for high current switching applications. 2SK3511-S