TRANSISTOR 2.4GHZ Search Results

TRANSISTOR 2.4GHZ Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2.4GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
H3101B Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration	PDF
HFA3101 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz Contextual Info: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz	PDF
transistor npn c 9012 Abstract: HFA3101BZ 5GHz band pass filter Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter	PDF
Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640F BFP640may	PDF
acs sot-343 Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560	PDF
marking re Abstract: BFP640 BGA420 T-25 Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 marking re BFP640 BGA420 T-25	PDF
bfp640 Abstract: BFP640/F Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 bfp640 BFP640/F	PDF
620 sot-343 Abstract: acs sot-343 Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343	PDF
bfp640f Abstract: BFP420F Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640F bfp640f BFP420F	PDF
BFP640E6327 Abstract: BFP640 noise figure bfp640e R4S BFP640 Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640	PDF
bfp640f Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640F bfp640f bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz	PDF
R4S BFP640 Abstract: BFP640 transistor ph 45 v marking r4s Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s	PDF
kf 8715 Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96 Contextual Info: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96	PDF

4GHZ TRANSISTOR Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor	PDF
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640	PDF
HFA3101 Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair Contextual Info: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair	PDF
BFR740L3RH Abstract: BFR705L3RH AN077 Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, 3 height 0.32 mm, ideal for modules 1 2 • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications,	Original	BFR740L3RH BFR740L3RH BFR705L3RH AN077	PDF
ACS 086 Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz	PDF
germanium transistor ac 128 Abstract: BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3 Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz	Original	BFR740L3RH BFR74 germanium transistor ac 128 BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3	PDF
bfp740 Contextual Info: BFP740 NPN Silicon Germanium RF Transistor 3 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz	Original	BFP740 VPS05605 OT343 bfp740	PDF
BFP640 noise figure Abstract: s parameters 4ghz Contextual Info: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz	PDF
BFR740L3RH Abstract: BFR705L3RH GMA marking TP 180 Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz	Original	BFR740L3RH BFR740L3RH BFR705L3RH GMA marking TP 180	PDF
germanium transistor ac 128 Abstract: BFR705L3RH BFR740L3RH WLAN chip Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 a wide range of wireless applications 1 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz	Original	BFR740L3RH germanium transistor ac 128 BFR705L3RH BFR740L3RH WLAN chip	PDF

TRANSISTOR 2.4GHZ Search Results

TRANSISTOR 2.4GHZ Result Highlights (5)

TRANSISTOR 2.4GHZ Datasheets Context Search

BFP620 acs

H3101B

HFA3101

transistor npn c 9012

acs sot-343

marking re

bfp640

620 sot-343

bfp640f

BFP640E6327

bfp640f

R4S BFP640

kf 8715

4GHZ TRANSISTOR

HFA3101

BFR740L3RH

ACS 086

germanium transistor ac 128

bfp740

BFP640 noise figure

BFR740L3RH

germanium transistor ac 128