TRANSISTOR 2 AMP 3 VOLT Search Results

KSC2715

Contextual Info: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

KSC2715

Contextual Info: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO

KSC2715

Contextual Info: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC838

Contextual Info: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC839

Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: NPN l i t A General O TRANSISTOR CHI P Semiconductor Industries, Inc. " 2 " DIODE & TRANSISTOR CHIPS Typical Device Types: 2N3506,2N3507 01 3 AMP Bonding Pad Areas Fast Switching Bam 2 5 X 4 mils Emitter (2) 6.5 X 4.5 mils Typical Switching (TO-5 Package)

KSC838

Contextual Info: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

KSC839

Abstract: FM AM Radio
Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSC839

Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TA7666P

Abstract: TA7739P "Led Level Meter Driver" ta7366p TA7666 ta7366 TA8188N 10 channel GRAPHIC EQUALIZER TA8189N TA7366P/F
Contextual Info: Preamplifier/Line Amplifie r Type No. Function/Features Package TA7137P SIP9-P-A TA7325P SIP9-P-A Car Audio Pre amp. with ALC transistor. Recommended Equpment Radio GeneralHome Cassette Stereo use Amp. • Voltage ■ 3 - 15V ■ 7 - 18V Built-in 2 channels. Built-in muting circuit.

2SC4204

Abstract: HPG800
Contextual Info: Ordering num ber:EN 2 5 3 1 A 2SC4204 N 0.2 5 3 1 A NPN Epitaxial Planar Silicon Transistor High-hpE* AF Amp Applications Applications AF amp, various drivers Features |Adoption of MBIT process High DC current gain hpg=800 to 3200 jLarge current capacity (IC=0.7A)

BCP157

Abstract: bcp15
Contextual Info: BCP157 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 1. -60Volt V CEO 2. 3 Amp continuous current 1.BASE D 2.COLLECTOR 3. Low saturation voltage  D1  3.EMITTER A  E E1 z$EVROXWHPD[LPXPUDWLQJV 7D °&

high voltage high current darlington array 18

Abstract: D74A5D c 623
Contextual Info: G E SOLID STATE t>fi 3ñ7SGñl □ □ 0 ci2fl3 2 y - ^ 3 — '^ 5 ~ D74A5D NPN POWER DARLINGTON TRANSISTOR ARRAY 100 VOLTS 5 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications.

2SC950

Abstract: 2SC951 2sc950 transistor 2SA573 2SA574
Contextual Info: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .

Contextual Info: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

2sd400

Abstract: 2sD400 npn transistor 2sd400 transistor
Contextual Info: 2SD400 TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Low-Frequency power Amp, Electronic Governor Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sD400 npn transistor

Abstract: 2SD400 2sd400 transistor transistor 2SD400 TO 92L NPN Transistor
Contextual Info: 2SD400 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE Features — 1 0.600 0.800 3 2 0.350 0.550 Low-Frequency power Amp, Electronic Governor Applications 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

KSC2669

Contextual Info: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

Transistor 126m

Abstract: 2SD1381 QS 100 NPN Transistor
Contextual Info: RO HM CO LTD 40E D -ir 7020= =]=] OOOSflbO 7 B R H M m /Transistors 2SD1381 - 7 ^ 3 3 - OS' 2 S D 1 3 S 1 '> u = i> Freq. Power Amp. npn Epitaxial Planar NPN Silicon Transistor •

D74FI2D

Contextual Info: D74FI2D NPN POWER DARLINGTON TRANSISTOR ARRAY 60 VOLTS 2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: D75FY2D
Contextual Info: D75FY2D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

D74FY2D

Contextual Info: D74FY2D NPN POWER DARLINGTON TRANSISTOR ARRAY 80 VOLTS 2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)