TRANSISTOR 2 AMP 3 VOLT Search Results

KSC2715

Contextual Info: KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain : GPE=30dB 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

KSC838

Contextual Info: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC839

Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: NPN l i t A General O TRANSISTOR CHI P Semiconductor Industries, Inc. " 2 " DIODE & TRANSISTOR CHIPS Typical Device Types: 2N3506,2N3507 01 3 AMP Bonding Pad Areas Fast Switching Bam 2 5 X 4 mils Emitter (2) 6.5 X 4.5 mils Typical Switching (TO-5 Package)

KSC838

Contextual Info: KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

KSC839

Abstract: FM AM Radio
Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSC839

Contextual Info: KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TA7666P

Abstract: TA7739P "Led Level Meter Driver" ta7366p TA7666 ta7366 TA8188N 10 channel GRAPHIC EQUALIZER TA8189N TA7366P/F
Contextual Info: Preamplifier/Line Amplifie r Type No. Function/Features Package TA7137P SIP9-P-A TA7325P SIP9-P-A Car Audio Pre amp. with ALC transistor. Recommended Equpment Radio GeneralHome Cassette Stereo use Amp. • Voltage ■ 3 - 15V ■ 7 - 18V Built-in 2 channels. Built-in muting circuit.

2SC4204

Abstract: HPG800
Contextual Info: Ordering num ber:EN 2 5 3 1 A 2SC4204 N 0.2 5 3 1 A NPN Epitaxial Planar Silicon Transistor High-hpE* AF Amp Applications Applications AF amp, various drivers Features |Adoption of MBIT process High DC current gain hpg=800 to 3200 jLarge current capacity (IC=0.7A)

BCP157

Abstract: bcp15
Contextual Info: BCP157 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 1. -60Volt V CEO 2. 3 Amp continuous current 1.BASE D 2.COLLECTOR 3. Low saturation voltage  D1  3.EMITTER A  E E1 z$EVROXWHPD[LPXPUDWLQJV 7D °&

2SC950

Abstract: 2SC951 2sc950 transistor 2SA573 2SA574
Contextual Info: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .

Contextual Info: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

KSC2669

Contextual Info: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

Transistor 126m

Abstract: 2SD1381 QS 100 NPN Transistor
Contextual Info: RO HM CO LTD 40E D -ir 7020= =]=] OOOSflbO 7 B R H M m /Transistors 2SD1381 - 7 ^ 3 3 - OS' 2 S D 1 3 S 1 '> u = i> Freq. Power Amp. npn Epitaxial Planar NPN Silicon Transistor •

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: D75FY2D
Contextual Info: D75FY2D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

D74FY2D

Contextual Info: D74FY2D NPN POWER DARLINGTON TRANSISTOR ARRAY 80 VOLTS 2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

2SC4413

Abstract: 2923 MARKING
Contextual Info: Ordering num ber: EN 2 9 2 3 No.2923 _ 2 S C 4 4 1 3 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s . Very small-sized package permitting the 2SC4413-applied sets to be made small and slim

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

2049B

Contextual Info: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process

2SC4493

Abstract: 2049B
Contextual Info: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process

ic 763

Abstract: SA76 Scans-009351
Contextual Info: Si PNP TRANSISTOR â S f\7 6 3 EPOXY MOLDED, LOW NOISE AUDIO AMP. ABSOLUTE M A X IM U M RATINGS T a : 25°C 763-Y 763-W VcBO . . V CEO . . -3 0 “ 60 V -2 5 -5 0

cce 7100

Abstract: cce+7100 Low frequency general-purpose amplifiers,
Contextual Info: Ordering number:EN 1853A _ 2 S A 14 3 4 N0.1853A P N P Epitaxial Planar Silicon Transistor SANYO High hpE> Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting oircuits Features

HGTG30N120E2

Contextual Info: HARRIS SEMICOND SECTOR iti m a r r is SbE D • 43DE271 DD4224S ÖDS H H A S H G T G 3 0 N 12 0 E 2 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistor IGBT August 1991 Package Features ^ "3 9 ^ 3 / • 50 Amp 1200 Volt • Latch Free Operation

2SA1434

Abstract: marking uma marking fl Vebo 15V
Contextual Info: Ordering number:EN 1853A _ 2 S A 14 3 4 N0.1853A P N P Epitaxial Planar Silicon Transistor SANYO High hpE> Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting oircuits Features