TRANSISTOR 1P Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

1N4001 transistor free

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

kst2222a

Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

TRANSISTOR 1P

Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

transistor marking 1p Z

Abstract: MMBT2222AE MMBT2907AE transistor 1p
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

toy motor 1.5 to 3 v datasheet

Abstract: audio automatic gain control NPN Silicon Epitaxial Planar Transistor DTC114E EMD29
Contextual Info: EMD29 Transistors General purpose transistor isolated transistors EMD29 DTB513Z and DTC114E A are housed independently in a EMT6 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) EMT6 zFeatures 1) DTr1 : PNP digital transistor

grm708

Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

BUK416-100AE

Abstract: BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH
Contextual Info: PHILIPS INTERNATIONAL bSE D H 7110SBb 00b3fl7b DAT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING-SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability,

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

E67349

Abstract: TLP572
Contextual Info: TOSHIBA TLP572 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS IRED & PHOTO-TRANSISTOR TLP572 AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared emitting

Transistor C G 774 6-1

Abstract: 100OHM RD45HMF1 Transistor C 1279
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING-SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability,

Contextual Info: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES DESCRIPTION • S-mini package NPN transistor in a plastic SOT323 S-mini package. • High speed switching. APPLICATIONS It is intended for high speed switching applications.

BUV23

Abstract: motorola transistor 0063
Contextual Info: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.