TRANSISTOR 1B Search Results

PBSS4540X

Abstract: PBSS5540X sc6211
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 04 Philips Semiconductors Product specification 40 V, 5 A NPN low VCEsat (BISS) transistor

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Gan hemt transistor RFMD

Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

MP3008

Contextual Info: MP3008 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding.

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

2SC3184

Abstract: 20HB1
Contextual Info: Ordering number: EN 1252C 2SC3184 N 0.1252C NPN Triple Diffused Planar Silicon Transistor SAÜYO i Switching Regulator Applications Features •High breakdown voltage Vcbo =900V . •Fast switching speed. •Wide ASO. min VCB = 800V,IE = 0 Veb = 5V,Ic = 0

Contextual Info: June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A HIGHĆVOLTAGE HIGHĆCURRENT The ULN2001A is obsolete DARLINGTON TRANSISTOR ARRAY and is no longer supplied. SLRS027G − DECEMBER 1976 − REVISED JUNE 2004 D 500-mA-Rated Collector Current D D D D

SZA-6044

Abstract: GaAs 0.15 pHEMT
Contextual Info: SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias SZA-6044 Preliminary 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor

Contextual Info: ULN2003AI HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY www.ti.com SLRS054B – JULY 2003 – REVISED FEBRUARY 2005 FEATURES • • • • • D, N, OR PW PACKAGE TOP VIEW 500-mA-Rated Collector Current (Single Output) High-Voltage Outputs . . . 50 V

AGR09060GUM

Abstract: JESD22-C101A
Contextual Info: Preliminary Product Brief March 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049E − FEBRUARY1997 − REVISED JULY 2006 D 500-mA Rated Collector Current Single D D D D D DW OR N PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

2146B

Abstract: PW500 2SC3705 ZENER DIODE 5v CAPACITY
Contextual Info: O rdering num ber: EN 2146B _ 2SC3705 N0.2146B NPN Epitaxial Planar Silicon Darlington Transistor SAXYO i Printer Driver Applications A p p licatio n s • Switching of L load motor drivers, printer drivers, relay drivers . F e a tu re s • High DC current gain.

AGRB10XM

Abstract: JESD22-C101A DSA00206784.txt
Contextual Info: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.

A114B

Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
Contextual Info: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

Contextual Info: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

2SC732TM

Abstract: M5030 S12R
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR T O S H IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE A U D IO AM PLIFIER APPLICATIO NS • • • High Breakdomn Voltage : V q e O = 50V Excellent hpg Linearity : hFE (Ic = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)

1000 watt mosfet power amplifier

Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for