TRANSISTOR 1B Search Results

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

BUX20

Abstract: bux 716 transistor BUX
Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

ULN2003

Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 - DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output High-Voltage Outputs. ,50 V D OR N PACKAGE (TOP VIEW) 1B[

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

transistor d46

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

IC-3520

Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

free transistor and ic equivalent data

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3904 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3904 is a dual NPN small signal surface mount transistor. „ FEATURES * Suitable for Low Power Amplification and Switching

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated

Contextual Info: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1733

Abstract: 2SC1275 2SC127
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two

Contextual Info: TRANSISTOR MODULE QCA200AA120 Q C A 200 A A 12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

NTE7426

Abstract: NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4—Input Positive NOR Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-Input High Voltage Interface NAND Gate 1A ^ V^ ~ 1B 3 B Q Vcc 1a g Q 4B

NTE74LS138

Abstract: NTE74HCT138 NTE74HC138 NTE74132 NTE74HC139 NTE74HC132 NTE74141 NTE74136 NTE74147 NTE74128
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74126, 14-Lead DIP, See Diag. 247 NTE74HC126, NTE74LS126A Quad Bus Buffer w/3-State Outputs NTE74128 14-Lead DIP, See Diag. 247 Quad 2—Input NOR 50Í2 Line Driver 1Y ^ ^ Q v cc B 4Y 1A n 1B H Q v cc