TRANSISTOR 1815 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SC1815

Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Contextual Info: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL

a1015gr

Abstract: A1015Y a1015-y A1015G A1015-GR transistor A1015Y A1015Y TE A-1015gr 2PA1015 transistor C 1815
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor 2PA1015

LLE103101

Abstract: LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000
Contextual Info: LLE Series Liquid level sensors DESCRIPTION The enhanced series of liquid level sensors incorporates a the dome to the photo-transistor. When liquid covers the photo-transistor trigger which provides a digital output that dome, the effective refractive index at the dome-liquid

transistor C 1815

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA1015 LOW FREQUENCY AMPLIFIER • C om plem ent to KSC 1815 • Col lector-Base Voltage: VCbo= -50V ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage

Transistor GR 1815

Abstract: C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815
Contextual Info: M CC TO-92 Plastic-Encapsulate Transistors C 1815 TRANSISTOR NPN FEATURES a cp Power dissipation TO-92 0.4W (Tamb=25°C) Pcm ; Collector current 1.EMITTER Ic m ; 2.COLLECTOR 0.15A Collector-base voltage V (B R )C B O : 60 V 3 . BASE Operating and storage junction temperature range

capacitor tnr 471

Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

14DK471

Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and

ERZC14DK911

Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

NPN transistor 1815

Abstract: transistor C 1815 transistor 1815 2PC1815 2PA1015 TRANSISTOR PNP 1815 700 v power transistor
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING • Low current max. 150 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • General purpose switching and amplification,

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BUK9524-55A

Abstract: buk9624
Contextual Info: BUK9524-55A; BUK9624-55A TrenchMOS logic level FET Rev. 01 — 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Transistor GR 1815

Abstract: 2sc1815 transistor fe2c
Contextual Info: TO SHIBA 2SC1815 Transistor Unit in m m Silicon NPN Epitaxial Type 5 . 1 MAX. Audio Frequency General Purpose Amplifier Applications Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.) • Excellent hFE Linearity

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

SY10EP51V

Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

transistor 1815

Abstract: H1815 NPN transistor 1815 2SC1815 1815 transistor 2SC1815H1815
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 1815 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C035BJ-01 芯片厚度：240±20µm 管芯尺寸：350x350µm 2 焊位尺寸：B 极 12150µm 2，E 极 16180µm 2

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

MRF941

Abstract: lansdale KMFC545
Contextual Info: ML13158 Wideband FM IF Subsystem For Dect and Digital Applications Legacy Device: Motorola MC13158 The ML13158 is a wideband IF subsystem that is designed for high performance data and analog applications. The ML13158 has and on–board grounded collector VCO transistor that may be used with a fundamental

1815y

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING • Low curren t max. 150 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 base 2 co lle cto r 3 e m itte r • G eneral purpose sw itching and am plification,