TRANSISTOR 123 DL Search Results

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

1BW TRANSISTOR

Abstract: transistor 79t
Contextual Info: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode

free transistor equivalent book

Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D

SKHI21

Abstract: SKHI 64 IGBT DRIVER SEMIKRON IGBT gate driver welding chopper transformer FOR UPS ups circuit diagram using igbt 1kW IGBT 1kw mosfet UPS circuit diagram pcb INVERTER 10kW
Contextual Info: se MIKR dn Absolute Maximum Ratings Symbol Vs V iH < o I CL IouLAVmax Vc e dv/dL V isolIO V isol12 RGonmin RGoffmin Q ouL/pulse T op T sLa Term Supply volLage prim. InpuL signal volLage High OuLpuL peak currenL OuLpuL average currenL (max.) CollecLor-EmiLLer volLage sense across

T-39-ZI

Abstract: 1BW TRANSISTOR transistor 1BW
Contextual Info: T S ^ - 'S I F 400 R12 KL SEE EUPEC Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Maximum rated values 1200 V 400 A V ces QOQOEbM Thermische Eigenschaften Transistor Transistor 3 MG3 S T 7 ]> MDI « U P E C Thermal properties R,hjc

dld101-7

Contextual Info: DLD101 LINEAR MODE CURRENT SINK LED DRIVER Features Mechanical Data • • • NEW PRODUCT • • • • • • • • • • Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Ideally Suited for Linear Mode Constant Current Applications

STAC3932

Abstract: RG316-25 STAC3932B 100C 700B TL11
Contextual Info: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Contextual Info: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.

Contextual Info: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20P03H DL HDTMOS E-FET™ High Density Pow er FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM

STAC3932F

Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
Contextual Info: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European

transistor a7n

Abstract: DIODE A7N A7N transistor 1df diode transistor 123 DL
Contextual Info: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power

Contextual Info: S i GEC PLESS EY ADVANCE INFORMATION S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of live high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The

Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

dcp51

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd zener diode color code TRANSISTOR SMD MARKING CODE s2a diode 1n4007 melf smd BAS40-4 smd diode sod-323 marking code L2 SMD SOT23 transistor MARK Y2 smd zener diode code 72 in sot-323 smd glass zener diode color codes
Contextual Info: Switching Diodes DC/DC Switching Zener Diodes Regulators / Controllers Transient Voltage Linear Regulators Suppressors TVSs Shunt Voltage Thyristor Surge References DIODES INCORPORATED Protection Devices Voltage Sup (TSPDs) Op Amp / Data Line Protection

100-C

Abstract: BUK482-60A
Contextual Info: N AUER P H I L IP S /D IS C RE TE h'lE J> m bbSB^l DD30727 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

100 pf, ATC Chip Capacitor

Abstract: STAC3932B 100C 700B TL11 RG316-25
Contextual Info: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

BFR96S

Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
Contextual Info: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

QM75DY-2HB

Abstract: QM75DY-2H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB * lc Collector current. 75A Collector-emitter voltage.1000V * hFE DC current g a in . 750 * Insulated Type

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

pp601 40

Abstract: DIODE PP602 PS5022 PS3022 PS3072 PS3322 PS4032 PS5042 PS5042-2 PP701
Contextual Info: THROUGH-HOLE SHAPE - PHOTO TRANSISTOR n Photo Transistor Shape Part No. Ta= 25°C Features Wavelength of Peak Sensitivy l P TYP. v Photo Current IC MIN. TYP. V CE Spatial Distribution The typical distribution example of each shape is shown below Response