TRANSISTOR 1127 Search Results

BLY92C

Abstract: mfc capacitor philips
Contextual Info: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

D2C17

Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

transistor k 425

Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance

Contextual Info: 2SC2551 TO SHIBA 2SC2551 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGHT VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS . 5.1 M AX.

2SK2996

Abstract: transistor 1127
Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

regulator 12 v 2 amperes

Contextual Info: TK732xx Power Conversion ICs ADVANCED INFORMATION LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5A Output Current Capability With External PNP Transistor ■ Built-in Short Circuit Protection ■ Excellent Load Regulation ■ CMOS/TTL Compatible ON/OFF Switch

PH3230S

Contextual Info: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 02 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package. Product availability: PH3230S in SOT669 LFPAK .

marking IAY

Abstract: 2SA1832F 2SC4738F
Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.) Excellent hFE Linearity

2SK2996

Abstract: slms 2.0 SLMS 2
Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r < v> • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON P CHANNEL MOS TYPE tt-M O SV <MT; Vi Vm i INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 + 0.3

K2961

Abstract: 2SK2961
Contextual Info: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance

2SA1349

Abstract: 2SC3381
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC3381 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS RECOM M ENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AM PLIFIERS 9 5+0 Ì

25C2710

Abstract: 2SA1150 2SC2710
Contextual Info: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SC3279

Contextual Info: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • . 5.1 M AX. High DC Current Gain and Excellent hpg Linearity : hFE(l) = 140-600 (Vce = 1V, Ie = 0.5A)

2SA1349

Abstract: 2SC3381
Contextual Info: T O S H IB A TOSHIBA TRANSISTOR 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS RECOM M ENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AM PLIFIERS

2SK2961

Abstract: transistor 1127
Contextual Info: T O SH IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : R nS (ON) —0.2H (Typ.)

Contextual Info: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • 1.6 ± 0.1 High Voltage and High Current ; V0 EO = 5OV, Iq = 150mA (Max.) Excellent hpg Linearity : hpE dC = 0.1mA) / hpE dC = 2mA) = 0.95 (Typ.)

Contextual Info: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS

Contextual Info: TOSHIBA 2SC 4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • U nit in mm 1.6 ± 0.1 High Voltage and High Current 0.85 ± 0.1 : V cE O = 50V> XC = !50m A (Max.) • Excellent hpj; Linearity

Contextual Info: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC