TRANSISTOR 1012 F Search Results

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor 1012

Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

KSR1012

Abstract: KSR2012
Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

TRANSISTOR 1015A

Abstract: N1033A n1033 transistor lrw N1013A N1027A N1004A N1011A
Contextual Info: 1 SIG N ETIC S D IG IT A L 1.000/10,000 S E R IE S ECL FU N C TIO N 2 O R Outputs w/Pulldowns _ _ _ . . 2 NOR Outputs w/Pulldowns P A R T NO. io to + ? r o P R O P A G A T IO N T O T A L POWER LO A D IN G D ELA Y D ISSIPA TIO N FAC TO R ruec typ. mW typ.

SP1750

Abstract: SP1000 SP1950 SP400 SP2000 SP175
Contextual Info: Choosing the right Sil-Pad Starts with the Mechanical and Electrical Properties MOUNTING TECHNIQUES MOUNTING PRESSURE AND Typical mounting techniques include: • A Spring clip, which exerts a centralized clamping force on the body of the transistor. The greater the mounting

TSSO28

Abstract: transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS
Contextual Info: APPLICATIONS ICs for Consumer Electronics Rolf Laurien New tuner ICs TUA 6010/6110: One-chip solutions for slimline tuners Tuners for television sets, video recorders and satellite receivers have become progressively smaller in recent years. Most recently, the

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

Contextual Info: 66099 RADIATION TOLERANT OPTOCOUPLER mn OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case. Features • • • • Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

2SC3089

Abstract: en1012a EN10-12 high voltage fast switching npn 4A
Contextual Info: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base

6N13B

Abstract: 6H136 MGL250 MCL2501
Contextual Info: TT. mm flfl ! 3UALITY TECHNOLOGIES CORP D "I 7 4 h b û S l ?«ENERAD INSTRUMENT ¿g* DGOaTDT 3 'tnr-'¥/-&3 ^TRANSISTOR OPTOCOUPLERS m ê W m -• •* ' Ä S S Ä MCL2501 MGL2503 (HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART

electromatic VOLTAGE LEVEL RELAY SM 125 220

Abstract: electromatic s system sv 115 230 electromatic RELAY SM 115 220 electromatic s system st 125 115 electromatic denmark sc 185 220 electromatic s system sb 165 electromatic s system SA 105 220 electromatic s system electromatic s system sm 105 220 ST 125 220 electromatic
Contextual Info: *I •»p»' • SYSTEM ELECTRONIC CONTROL- AND MONITORING MODULES û û f lc in o n if llk i S - SYSTEM SA B C 207 220 SUPPLY 2 2 0 V AC COMBI * 15s ■ RANGE SELECTOR 50 35^^6 5 riMfe rtELAY ON Delay on operate SA Interval timer & Delay on release SB Recycler & Interval timer

VIP 22A

Abstract: AD7546 Vip ct 22A
Contextual Info: AN ALO G D E V IC E S FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: -124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 250|iV max Low Input Voltage: 2|iV p-p

Contextual Info: Neutron testing of the ISL70444SEH quad operational amplifier Nick van Vonno Intersil Corporation 15 October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix

BUW52

Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Contextual Info: 7^5^537 ppgaa?! M • S G S -T H O M S O N ■ [L d e T F G M O ! S G S - T HO MS ON B 3ÜE U W 5 2 D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN ABSOLUTE MAXIMUM RATINGS

phototransistor ultraviolet

Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
Contextual Info: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to

transistor D361

Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
Contextual Info: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components

642S

Abstract: analog devices OP- METALIZATION PHOTOGRAPH 642LH
Contextual Info: ANALOG DEVICES □ FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk-124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 500/iV max Low Input Voltage Noise: 2¿tV p-p High Open Loop Gain

Contextual Info: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

4N49 opto

Contextual Info: 4N47, 4N48, 4N49 JAN. JANTX, AND JANTXV OPTOCOUPLERS D 3 0 3 1 , SEPTEMBER 1987 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Very High Current Transfer Ratio . . . 50 0% Typical 4N49 • Photon Coupling for Isolator Applications

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen

IGBT Power Module siemens ag

Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
Contextual Info: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522