TRANSISTOR 1012 F Search Results

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor 1012

Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

KSR1012

Abstract: KSR2012
Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

TSSO28

Abstract: transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS
Contextual Info: APPLICATIONS ICs for Consumer Electronics Rolf Laurien New tuner ICs TUA 6010/6110: One-chip solutions for slimline tuners Tuners for television sets, video recorders and satellite receivers have become progressively smaller in recent years. Most recently, the

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

Contextual Info: 66099 RADIATION TOLERANT OPTOCOUPLER mn OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case. Features • • • • Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

2SC3089

Abstract: en1012a EN10-12 high voltage fast switching npn 4A
Contextual Info: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base

6N13B

Abstract: 6H136 MGL250 MCL2501
Contextual Info: TT. mm flfl ! 3UALITY TECHNOLOGIES CORP D "I 7 4 h b û S l ?«ENERAD INSTRUMENT ¿g* DGOaTDT 3 'tnr-'¥/-&3 ^TRANSISTOR OPTOCOUPLERS m ê W m -• •* ' Ä S S Ä MCL2501 MGL2503 (HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART

406X1

Abstract: 3860 RN55C DYMEC voltage to frequency converter
Contextual Info: MODEL: DYMEC 3860 A S u b s id ia ry of SILICON TRANSISTOR C O R P. Signal Conditioning 10MHz V/F Converter quickly implement a front-end/con­ verter design with guaranteed endto-end specifications, tailored to their application requirements, and save design time and pc board

VIP 22A

Abstract: AD7546 Vip ct 22A
Contextual Info: AN ALO G D E V IC E S FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: -124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 250|iV max Low Input Voltage: 2|iV p-p

Contextual Info: Neutron testing of the ISL70444SEH quad operational amplifier Nick van Vonno Intersil Corporation 15 October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix

Contextual Info: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

4N49 opto

Contextual Info: 4N47, 4N48, 4N49 JAN. JANTX, AND JANTXV OPTOCOUPLERS D 3 0 3 1 , SEPTEMBER 1987 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Very High Current Transfer Ratio . . . 50 0% Typical 4N49 • Photon Coupling for Isolator Applications

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen

N1033A

Abstract: n1033 10000 series of ECL gates N1013A N1011A c 1006 TRANSISTOR eel -16-2005 N1017A N1010A N1014A
Contextual Info: S IG N E T IC S D IG IT A L 1 .0 0 0 /1 0 ,0 0 0 S E R IE S ECL V PART DC OUTPUT NO. <0 t o + 75UC Dual 4 In p u t Gate. L O A D IN G DELAY FA C TO R w e e ty p . 2 O R O u tp uts w/P ulldow ns 4 .0 2 N O R Outputs w /P ulldow ns Dual 4 In p u t Gat«, 2 O R Outputs w /P ulldow ns

sab 1009

Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

UTC1012

Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
Contextual Info: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

10Gb CDR

Abstract: BA rx transistor INF8077i Xlaui IC 555 architecture lc oscillator led based graphic equalizer ic P802 CEI-11G 11GSR
Contextual Info: Emerging Standards at ~10 Gbps for Wireline Communications and Associated Integrated Circuit Design and Validation An Invited Paper for CICC Mike Peng Li and Sergey Shumarayev Altera Corporation 101 Innovation Road San Jose, CA 95134 Abstract-We first review the signaling and jitter requirements

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: Sil-Pad A2000 Higher Performance,High Reliability Insulator Features and Benefits T YPICAL PROPERT IES OF SIL-PAD A2000 PROPERTY Color • Thermal impedance: 0.32°C-in 2/W @50 psi • Optimal heat transfer • High thermal conductivity: 3.0 W/m-K IMPERIAL VALUE