TRANSISTOR* SM5 Search Results

SM56B

Abstract: sm56b equivalent Semelab sm56b
Contextual Info: SEME SM56B LAB NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • LOW SATURATION VOLTAGE • ULTRA FAST TURN–ON AND TURN–OFF SWITCHING tr / tf = 40ns APPLICATIONS • High speed TO220 transistor suited for low voltage applications.

IR2C17

Abstract: SM5* sharp
Contextual Info: SHARP E L E K / MELEC D IV 1SE o | flia a ? ^ 7-Unit 400mA Darlington Transistor Array " IR2C17/IR2C17N • O Q O n tb t | IR2C17/IR2C17N T-V3-25 7-Unit 400mA Darlington Transistor Array Pin Connections Description The IR2C17/IR2C17N is a 7-circuit driver. Input

SM5* sharp

Contextual Info: 7-Unit 400mA Darlington Transistor Array “ IR2C17/IR2C17N — i n o P 1 ^ - / i n O r IK ^ lsl / /IK ^ ls • 1 7 IVI 7-Unit 400mA Darlington l / IN Transistor Array ■ Description Pin Connections The IR2C17/IR2C17N is a 7-circuit driver. Input characteristics are specified to match the SHARP

Contextual Info: SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg

SM58B

Abstract: transistor 0190 8178 LE17
Contextual Info: SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg

2SK2145

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

2SK2145

Abstract: TOSHIBA c 10VRg
Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

2SK2145

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 •

2SK2145

Contextual Info: 2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 super mini type with 5 leads. · High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V

Contextual Info: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 1 <; K 1 1 A 5 • ■ h t Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • • • • 0.2 2.8+-0.3 Including Two Devices in SM5 Super Mini Type with 5 Leads.

2SK2145

Contextual Info: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0

2SK2145

Contextual Info: TO SH IBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 • . • • • Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfc| : |Yfc| = 15mS (Typ.) at VDS = 10V, VGS = 0

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Transistor w1l

Abstract: sample codes of PIC12C508
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES § § § § § § § § § Eight Channels of Programmable I/O with Open-Drain Outputs On Resistance of PIO Pulldown Transistor 100W max ; Off Resistance 10MW (typ) Individual Activity Latches Capture

DS2408

Abstract: 10MW CRC16 DS2408S DS2480B DS9097U J-STD-020A sample codes of PIC12C508 DS80C520
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES § § § § § § § § § Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100W max ; Off-Resistance 10MW (typ) Individual Activity Latches Capture

CRC16

Abstract: CRC-16 DS2408 DS2408S DS2480B DS9097U J-STD-020A sample codes of PIC12C508 DS80C520
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture Asynchronous State Changes at PIO Inputs

DS80C520

Abstract: 10MW CRC16 DS2408 DS2408S DS2480B DS9097U J-STD-020A
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES § § § § § § § § § Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100W max ; Off-Resistance 10MW (typ) Individual Activity Latches Capture

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch PIN CONFIGURATION FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ)

DS2408

Abstract: 10MW CRC16 DS2408S DS2480B DS9097U J-STD-020A
Contextual Info: DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES § § § § § § § § § Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100W max ; Off-Resistance 10MW (typ) Individual Activity Latches Capture

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture