TRANSISTOR* IGBT 200A 300 V Search Results

IGBT module FZ

Abstract: IGBT FZ 200 22nf IGBT FZ 1200 kf1 IGBT module FZ 1200 IGBT module FZ 400 IGBT FZ 1000
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

induction heat circuit

Abstract: igbt dc to dc chopper control circuit diagram igbt for HIGH POWER induction heating bi-directional switches IGBT ups circuit diagram using igbt dual DIODE 200A 600V dynex igbt 1200v ic ARM igbt dc to dc chopper control igbt for induction heating
Contextual Info: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces December 2003 version, issue FDS5697-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-2.0 February 2004 KEY PARAMETERS

ac chopper circuit

Abstract: bi-directional switches IGBT igbt for HIGH POWER induction heating induction heat circuit induction heating control circuit diagram Material Handling Systems DIM200WKS12-A000 fds5969
Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces December 2003 version, issue FDS5969-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5969-2.0 February 2004 KEY PARAMETERS

Contextual Info: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces DIM200MLS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-1.1 December 2003 KEY PARAMETERS VCES typ VCE(sat)*

Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces DIM200MKS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5969-1.1 December 2003 KEY PARAMETERS VCES typ VCE(sat)*

IGBT module 700a

Abstract: ir igbt
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

DIM200PLM33-A000

Contextual Info: DIM200PLM33-A000 DIM200PLM33-A000 IGBT Chopper Module Preliminary Information Replaces issue April 2003, version DS5597-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

eupec igbt

Abstract: IGBT module FZ 600kW
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

DIM200WLS12-A000

Abstract: bi-directional IGBT
Contextual Info: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces February 2004 version, issue FDS5697-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-3.0 June 2004 KEY PARAMETERS

eupec igbt

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

DIM200WKS12-A000

Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS

Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

DIM200WKS17-A000

Contextual Info: DIM200WKS17-A000 DIM200WKS17-A000 IGBT Chopper Module - Upper Arm Control FDS5699-1.1 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK)

T0340VB

Abstract: T0340VB45G westcode igbt
Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

DIM200WLS17-A000

Abstract: igbt 600v 400A single half bridge
Contextual Info: DIM200WLS17-A000 DIM200WLS17-A000 IGBT Chopper Module - Lower Arm Control FDS5698-1.1 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK)

IC 7424

Abstract: DIM200BSS12-A000 diode 1000V
Contextual Info: DIM200BSS12-A000 DIM200BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue DS5693-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5693-3.0 May 2004 KEY PARAMETERS VCES typ

AN4502

Abstract: AN4503 AN4505 AN4506 GP201MHS18
Contextual Info: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters

Contextual Info: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM200WHS12-E000

Contextual Info: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM200WKS12-A000 IGBT Chopper Module – Upper Arm Control DS5969-3.1 July 2007 LN25357 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)

DIM200WLS12-A000

Contextual Info: DIM200WLS12-A000 IGBT Chopper Module – Lower Arm Control DS5697-3.1 July 2007 LN25356 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

dc to dc chopper using igbt

Abstract: DIM200WKS12-A000 INFORMATION OF IC 7424
Contextual Info: DIM200WKS12-A000 IGBT Chopper Module – Upper Arm Control DS5969-3.2 January 2009 LN26554 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)