2009 - Not Available
Abstract: No abstract text available
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched off , output switches. The output slope is defined by the gateâdrain capacitance of output transistor and , âactive diodesâ: when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drainâbulk diode of the
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AMIS-30542
AMIS-30542
30542/D
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2012 - AMIS30542C5421G
Abstract: No abstract text available
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched off , output switches. The output slope is defined by the gate-drain capacitance of output transistor and the , ": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor
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AMIS-30542
AMIS-30542/D
AMIS30542C5421G
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2012 - 30532
Abstract: C532 diode AMIS-30532 30532 64 amis30532
Text: voltage is sensed across the transistor , the transistor is switched-off. In order to reduce the radiated , by the gate-drain capacitance of output transistor and the (limited) current that drives the gate , transistors are equipped with so-called "active diodes": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent
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AMIS-30532
AMIS-30532/D
30532
C532 diode
30532 64
amis30532
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2009 - C532 diode
Abstract: No abstract text available
Text: . Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off. In , switches. The output slope is defined by the gate-drain capacitance of output transistor and the (limited , is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor . Depending on the desired
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AMIS-30532
AMIS-30532/D
C532 diode
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2009 - AMIS-30542
Abstract: A114 C542 JESD22 step motor driver nxt
Text: the transistor , the transistor is switched off. In order to reduce the radiated/conducted emission , gate-drain capacitance of output transistor and the (limited) current that drives the gate. There are two , transistors are equipped with so-called "active diodes": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the
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AMIS-30542
AMIS-30542
AMIS-30542/D
A114
C542
JESD22
step motor driver nxt
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2009 - C532 transistor
Abstract: diode cc 3053 AMIS30532C5321RG nqfp NQFP-32 C532 diode 30532 stepper motor sla JESD-51 step motor driver nxt
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off , output switches. The output slope is defined by the gate-drain capacitance of output transistor and the , current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor
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AMIS-30532
AMIS-30532/D
C532 transistor
diode cc 3053
AMIS30532C5321RG
nqfp
NQFP-32
C532 diode
30532
stepper motor sla
JESD-51
step motor driver nxt
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CD4529BC
Abstract: CD4529 4529B
Text: . Derate Linearity at 12mW/°C to 200mW DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR Ta = FULL , ss (S q u a re W ave), t r,tf=20 ns 5 1Ü 15 20 10 8 40 20 15 ns CONTROL (ADDRESS OR STRC
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CD4529B
20-Volt
4529B
CD4529B.
CD4529BC
CD4529
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2000 - Not Available
Abstract: No abstract text available
Text: then closes the SCP terminal by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA , circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage circuit : 1.23 V output , terminal. Output transistor has common ground independent of signal ground. This output can source or sink up to 50 mA. Power supply terminal (3.6 to 18 V) Open collector output terminal. Output transistor , for timer latch short-circuit protection circuit". 2.46 V reference voltage output terminal which can
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DS04-27203-6E
MB3778
MB3778
F0012
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circuit diagram of a laser lighter
Abstract: No abstract text available
Text: open-collector transistor NA1-PK3-PN PNP open-collector transistor 30 to 300 mm 1.181 to 11.811 in Beam pitch 24.6 mm 0.969 in Notes: 1) The sensing range is the possible setting distance between , 49.2 mm 1.937 in Sensing range (Note 2) 30 to 300 mm 1.181 to 11.811 in Beam pitch 24.6 mm , open-collector transistor NPN open-collector transistor ⢠Maximum source current: 100 mA ⢠Maximum sink , diode Tr : PNP output transistor E : Job indicator (IND.) Color code / Connector pin No. of
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2000 - AN8015SH
Abstract: No abstract text available
Text: .) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance: ± 3%) · Output , + Error amp. 2 0.5 V Triangular wave OSC 1.2 V PWM comparator 0.37 V Reference supply 2.46 , Symbol Conditions Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage , 0.9 1.2 V Output leak current ILEAK VCC = 34 V, when output transistor is off , O VREF: The output terminal for the reference voltage ( 2.46 VREF overcurrent detection V
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AN8015SH
AN8015SH
10-pin
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Not Available
Abstract: No abstract text available
Text: transistor . Practically, the 6/8 Figure 2: Typical toff vs. Capacity of C 0 50 100 1 50 2 0 0 2 , ), then it increases d ing the first period of the source transistor switi off (source,1st) and it becom , requii RPM is reached, it becom e of no need a strc torque and the LIN Vref starting from a va higher
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L6232A
L6232A
PLCC44
M91L6232-13
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2002 - Not Available
Abstract: No abstract text available
Text: precision reference voltage circuit ( 2.46 V (allowance: ± 3%) ⢠Output block is open-collector , 1.2 V PWM comparator 0.37 V Reference supply 2.46 V (allowance : ± 3%) 8 RT CT , 2.386 2.46 2.534 V Reference voltage block Reference voltage VREF IREF = â1 mA , V, when output transistor is off   10 µA RT terminal voltage VRT ï , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current â3 mA or under. This
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AN8015SH
AN8015SH
10-pin
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2003 - AN8015SH
Abstract: No abstract text available
Text: lock-out (U.V.L.O.) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance , PWM comparator 0.37 V Reference supply 2.46 V (allowance : ± 3%) Error amp. Pl ea M , Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage block Reference voltage , current ILEAK VCC = 34 V, when output transistor is off 10 µA RT terminal voltage , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This
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AN8015SH
AN8015SH
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2003 - TRANSISTOR 246
Abstract: AN8015SH
Text: circuit ( 2.46 V (allowance: ± 3%) · Output block is open-collector (darlington) type. · High absolute , supply 2.46 V (allowance : ± 3%) 8 RT CT VREF 1 6 Block Diagram 7 VCC · , Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage block Reference voltage , current ILEAK VCC = 34 V, when output transistor is off 10 µA RT terminal voltage , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This
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AN8015SH
AN8015SH
10-pin
TRANSISTOR 246
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AN8015SH
Abstract: No abstract text available
Text: .) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance: ± 3%) · Output , + 2 0.5 V Triangular wave OSC 1.2 V PWM comparator 0.37 V Reference supply 2.46 V , 2.386 2.46 2.534 V Reference voltage block Reference voltage VREF IREF = -1 mA , , when output transistor is off 10 µA RT terminal voltage VRT 0.5 V , voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This terminal is
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AN8015SH
AN8015SH
10-pin
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1994 - Not Available
Abstract: No abstract text available
Text: the SCP terminal (pin 15) by turning transistor Q2 on. ⢠Protection Latch Circuit 2.46 V 1 µA , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , soft-start operation. 7 OUT1 Open collector output terminal. Output transistor has common ground , . Output transistor has common ground independent of signal ground. This output can source or sink up to , CONSTANT FOR TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUITâ. 16 VREF 2.46 V reference voltage
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1994 - LCD 16PIN
Abstract: FPT-16P-M05 FPT-16P-M06 MB3778 SSOP-16 IRT 1250
Text: terminal (pin 15) by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp , timer latch short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V , soft-start operation. 7 OUT1 Open collector output terminal. Output transistor has common ground , VCC 10 OUT2 Open collector output terminal. Output transistor has common ground independent , TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUIT". 16 VREF 2.46 V reference voltage output
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DS04-27203-8Ea
MB3778
MB3778
LCD 16PIN
FPT-16P-M05
FPT-16P-M06
SSOP-16
IRT 1250
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1994 - Not Available
Abstract: No abstract text available
Text: closes the SCP terminal (pin 15) by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , soft-start operation. Open collector output terminal. Output transistor has common ground independent of , collector output terminal. Output transistor has common ground independent of signal ground. This output can , , see " HOW TO SET TIME CONSTANT FOR TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUIT". 2.46 V reference
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DS04-27203-8E
MB3778
MB3778
F0605
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1999 - Not Available
Abstract: No abstract text available
Text: (U.V.L.O.) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance : ± 3%) · , CT 1 1.2 V 0.37 V 6 7 Reference supply 2.46 V (allowance : ± 3%) 0.5 V Triangular wave , +25°C Ta = 25°C to 85°C 2.386 2.46 5 2 ± 0.5 ± 0.5 -20 2.534 20 10 10 V mV mV mV % % mA Symbol , VREF : The output terminal for the reference voltage VREF overcurrent detection ( 2.46 V) Use with a , Maximum duty ratio Dumax (%) 90.0 2.47 89.5 2.46 2.45 -40 -20 0 20 40 60
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AN8015SH
AN8015SH
10-pin
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1994 - Not Available
Abstract: No abstract text available
Text: Built-in 2.46 V reference voltage circuit : 1.23 V output can be obtained from RT terminal Variable , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , CIRCUITâ. 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA , MB3778 s BLOCK DIAGRAM 9 14 2 1 1.23 V 2.46 V 16 Reference Voltage 1.9 V Power
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DS04-27203-8Ea
MB3778
MB3778
MB3778â
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2003 - FPT-16P-M05
Abstract: FPT-16P-M06 MB3778 MB3778P MB3778PF MB3778PFV
Text: transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp. 15 R1 Error Amp. 1 Error , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , ". 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA. This pin is
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DS04-27203-7E
MB3778
MB3778
F0308
FPT-16P-M05
FPT-16P-M06
MB3778P
MB3778PF
MB3778PFV
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transistor BD 246
Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Text: BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 ⢠Driver Stages ⢠Active Convergence ⢠Control Circuits ⢠Switching Application â , Instruments 2-13 BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at 25 °C , 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1 BD 250 BD 249 125 -45 -25 25 1,5 BD 250 A BD 249 A
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BD136
BD135
MIL-STD-750.
OT-32
40PEP
80PEP
OT-32
O-66P
transistor BD 246
transistor BD 249
transistor BD 240
BD 35 transistor
transistor bd 242
BD139-6
transistor BD 239
transistor BD245
BD135
transistor BD 241
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2000 - FPT-16P-M05
Abstract: FPT-16P-M06 MB3778 MB3778P MB3778PF MB3778PFV REGULATOR latch disable 16-pin dip
Text: terminal by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp. 15 R1 , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , ". 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA. This pin is
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DS04-27203-6E
MB3778
MB3778
FPT-16P-M05
FPT-16P-M06
MB3778P
MB3778PF
MB3778PFV
REGULATOR latch disable 16-pin dip
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transistor BD 246
Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 ⢠Driver Stages ⢠Active Convergence ⢠Control Circuits ⢠Switching Application â , TRANSISTOR electrical characteristics at 25 °C free-air temperature (unless otherwise noted) PARAMETER , C BD 243 C 65 -100 -6 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1 BD 250 BD 249 125 -45 -25 25
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BD135
BD136
STD-750.
OT-32
40PEP
80PEP
OT-32
O-66P
transistor BD 246
transistor BD 135
transistor bd 242
BD135 switch
BD139
BD139-6
transistor BD
transistor BD 246 b
transistor BD 249
bd135 texas instruments
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BDX 241
Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Text: BD137 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR _TT71 DESIGNED FOR COMPLEMENTARY USE WITH BD138 ⢠Driver Stages ⢠Active Convergence ⢠Control Circuits ⢠Switching Application â , . Texas Instruments 2-15 BD137 NPN EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at , 243 B 65 -80 -6 30 0,3 BD 244 C BD 243 C 65 -100 -6 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1
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BD137
BD138
MIL-STD-750.
OT-32
OT-32
40PEP
80PEP
BDX 241
TRANSISTOR 246
transistor BD 240
transistor BD 246
TRANSISTOR Bd 137
BD139-6
transistor BD 249
transistor bd 242
transistor BD245
BD137
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