transistor kf10n60 datasheet & application notes

Part	Manufacturer	Description
BD9G102G-LB	ROHM Semiconductor	6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ	ROHM Semiconductor	12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9G101G	ROHM Semiconductor	Step-down Switching Regulators with Built-in Power MOSFET
BD9E104FJ	ROHM Semiconductor	7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter
BD9A600MUV	ROHM Semiconductor	2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB	ROHM Semiconductor	12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)

transistor kf10n60 Datasheets Context Search

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Catalog Datasheet	MFG & Type	PDF	Document Tags
1999 - TV horizontal Deflection Systems Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet CRT TV electron gun horizontal section in crt television TV flyback transformer Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A	Original	PDF	16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet CRT TV electron gun horizontal section in crt television TV flyback transformer
1999 - ADM6315-31D4ARTZR7 Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline	Original	PDF	OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
2006 - transistor C 2240 Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143 Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline	Original	PDF	OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
1999 - TO-253-AA Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240 Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline	Original	PDF	OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
1999 - Not Available Abstract: No abstract text available Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4	Original	PDF	OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260 Abstract: YG-6260 toshiba TO-3P AC701 Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This	OCR Scan	PDF
1999 - transistor TO Outline Dimensions Abstract: transistor d 140 g Text: -253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters , -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4	Original	PDF	OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g
2001 - "Phase Discriminator" Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors	Original	PDF	AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
1999 - TV horizontal Deflection Systems mosfet Abstract: TRANSISTOR REPLACEMENT GUIDE dtv32f15 flyback smps planar an363 electron gun CRT Flyback transformer planar BU508A DTV32F1500A horizontal transistor Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A	Original	PDF	16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems mosfet TRANSISTOR REPLACEMENT GUIDE dtv32f15 flyback smps planar an363 electron gun CRT Flyback transformer planar BU508A DTV32F1500A horizontal transistor
bonitron Abstract: m3775rk M3575T VFD for motors transistor product line manuals "variable frequency drive" "variable frequency drive" circuit Application Manual Power Modules vfd motor braking in ac motors Text: M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK Resistive , Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · , 67hp / 50kW and Above Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard	Original	PDF
2008 - w32 transistor Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33 Text: Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor control bit PU00 Pull-up transistor control bit PU12 Pull-up transistor control bit PU11 Pull-up transistor control bit PU10 Pull-up transistor control bit PU22 Pull-up transistor control bit PU21 Pull-up transistor control bit PU20 Pull-up transistor control bit REC05B0047-0200/Rev.2.00 455A Group at , retained 00002 P23 pull-up transistor OFF P23 pull-up transistor ON P22 pull-up transistor OFF P22	Original	PDF	M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
2006 - Buck-Boost Converter advantages Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor Text: topology and switching transistor * Only available in ISODRAIN package 8 PWM+CCM PFC CoolSET TM , Power Supplies SMPS Controller with very few peripheral components, using MOS Transistor , magnetic coupling C Cheap solution Disadvantages C Power transistor drain-source voltage VDS = VO > VI , , ICE3DS01 Forward Converter Single Transistor Forward Converter Single-ended Forward Converter Advantages C Demagnetizing the core is no problem C Simple circuitry Disadvantages C Power transistor	Original	PDF	B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
smd transistor marking 12W Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor Text: transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor , - J Z L Electrode Connections Model 1 Emitter Transistor Drain 2SK208/209 2SK210/211 Gate 2 Base Source Drain 3 Collector Gate Source Fig. 1 Outline Drawing of the Super Mini Transistor 94 (2) Power Mini Transistor (SOT-89 equivalent) Figure 2 shows an outline drawing of the Power Mini Transistor . The molded plastic por tion of this unit is compact, measuring 2.8 mm (L) by 4.5 mm (W	OCR Scan	PDF	O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
2005 - LED DRIVER BY MC34063 Abstract: schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback Text: the best efficiency performance of bipolar transistor and diodes, Philips Semiconductors has , Step-down Regulator the switching waveforms for this regulator. Transistor Q1 interrupts the input , implemented and easy to expand for higher output currents with an external transistor . Further, this , . With built- in switch transistor , the MC34063 can switch up to 1.5 A current. But for higher output , transistor (s) Vin 0.15 8 7 6 5 1000uF DRc SWc Ipk SWe Vcc Ct FB Gnd 1	Original	PDF	AN10360 MC34063, PBSS5320T, PMEG2020EJ LED DRIVER BY MC34063 schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback

1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types , transistor action. In way of contrast, unipolar types include the junction-gate and insulatedgate , of transistor terms commonly used in Agilent Technologies transistor data sheets, advertisements , potentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
2012 - J3305-2 y transistor Abstract: No abstract text available Text: Application Note AN01 - Transistor Testing Over the past decade, Elm Electronics has helped many , transistor pins are not usually marked. The following discussion shows how you might test NPN and PNP transistors in order to identify the three leads. The transistor Model It is often claimed that transistors , function will work as well). This type of test is based on the assumption that a transistor can be , an NPN transistor with symbol: C B E the test assumes a model that is simply two diodes	Original	PDF
2001 - "Phase Discriminator" Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors	Original	PDF	AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
1998 - Zener Diode 3v 400mW Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor	Original	PDF	DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
1998 - c102 TRANSISTOR Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor Text: General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating , dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor The following , characteristic curves 490 Transistors IMX17 491 Transistors General purpose transistor , with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference	Original	PDF	94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMX17 2SD1484K 500mA 96-523-D15) F04-C101) c102 TRANSISTOR c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
2002 - MJ10100 Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power , Introduction The power transistor , in today's switching power supply, exists in an environment which is quite , impedance sources add up to something close to the worst of all possible worlds for the transistor . Given this type of environment, it is not surprising to find that keeping transistor stresses within , determined by the more subtle aspects of how stress imposed by the power supply relates to transistor safe	Original	PDF	AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
2000 - 68HC12 Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990 Text: metal-oxide semiconductor) transistor , minority carriers flow through the channel of the transistor and , layer. The following transistor cross sections help describe this process. These diagrams do not , Application Note CMOS transistor . Polysilicon is then deposited across the wafer, photo resist is applied as , is etched away, leaving only the polysilicon used to form the gate of the transistor . A ROM array , significantly different transistor characteristics. The importance of this difference is described in the	Original	PDF	AN1837/D AN1837 68HC12 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
2002 - Si3201 Abstract: Si321x AN47 ac proslic max 32Q1 0X0012 I321 Text: increases, so does the junction temperature of the transistor die. The maximum admissible junction temperature must not be exceeded because this could damage or destroy the transistor die. In the Si321x, the , corresponding indirect registers. If the power in any external transistor exceeds the programmed threshold , the power threshold is calculated based on the characteristic of the transistors used. Transistor manufacturers provide this information in terms of thermal resistance for each transistor package. The	Original	PDF
2012 - BLF8G22LS-310AV Abstract: BLP8G07S-140P BLP8G10S-230 SOT12 BLP8G09S-140P q113 BLF8G27LS-60A Gen8A BLF8G10LS-400PV LTE base station Text: push-pull LDMOS transistor for LTE applications Gen8 OMP push-pull LDMOS transistor for GSM and LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications with wide VBW Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications with wide VBW Gen8 OMP LDMOS transistor for GSM and LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications with	Original	PDF	OT502-sized OT539-sized BLF8G22LS-310AV BLP8G07S-140P BLP8G10S-230 SOT12 BLP8G09S-140P q113 BLF8G27LS-60A Gen8A BLF8G10LS-400PV LTE base station
1998 - NPN general purpose silicon transistors Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP Text: (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors) IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference , dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference	Original	PDF	94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP
2009 - RF remotecontrol schematic diagram Abstract: TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference bpf 434 mhz 2 to 3 GHz bandpass filter wide band Miteq SMC-02 BFP460 circuit diagram of rf 434 Text: Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass 1 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass Filter Application Applications LNA , The ESD-Hardened BFP460 Transistor with 1500 V Human Body Model ESD rating is shown in a low-cost , Note 4 Rev. 1.2, 2008-02-26 Application Note No. 154 ESD-Hardened BFP460 RF Transistor in a , . 1.2, 2008-02-26 Application Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz	Original	PDF	BFP460 RF remotecontrol schematic diagram TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference bpf 434 mhz 2 to 3 GHz bandpass filter wide band Miteq SMC-02 circuit diagram of rf 434

transistor kf10n60 Datasheets

Top Results (6)

transistor kf10n60 Datasheets Context Search

1999 - TV horizontal Deflection Systems

1999 - ADM6315-31D4ARTZR7

2006 - transistor C 2240

1999 - TO-253-AA

1999 - Not Available

YG6260

1999 - transistor TO Outline Dimensions

2001 - "Phase Discriminator"

1999 - TV horizontal Deflection Systems mosfet

bonitron

2008 - w32 transistor

2006 - Buck-Boost Converter advantages

smd transistor marking 12W

2005 - LED DRIVER BY MC34063

1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

2012 - J3305-2 y transistor

2001 - "Phase Discriminator"

1998 - Zener Diode 3v 400mW

1998 - c102 TRANSISTOR

2002 - MJ10100

2000 - 68HC12

2002 - Si3201

2012 - BLF8G22LS-310AV

1998 - NPN general purpose silicon transistors

2009 - RF remotecontrol schematic diagram