TRANSFER SWITCH Search Results

PS7141L-1C

Abstract: PS7141L-1C-A PS7141L-1C-E3 PS7141L-1C-E3-A PS7141L-1C-E4 NL601 PS7141-1C PS7141-1C-A
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7141-1C,PS7141L-1C 8-PIN DIP, 400 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7141-1C and PS7141L-1C are transfer type solid state relays containing normally open N.O. contact and

800v nmos

Contextual Info: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

2SK1357

Abstract: 2Sk1357 transistor
Contextual Info: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )

2SK2030

Contextual Info: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)

Contextual Info: in te i 82588 HIGH INTEGRATION LOCAL AREA NETWORK CONTROLLER Integrates ISO Layers 1 and 2 — CSMA/CD Medium Access Control MAC — On-Chip Manchester, NRZI Encoding/Decoding — On-Chip Logic Based Collision Detect and Carrier Sense 2 Clocks per Data Transfer

Contextual Info: ß fö H O M O K lM lf intei M82380 HIGH PERFORMANCE 32-BIT DMA CONTROLLER WITH INTEGRATED SYSTEM SUPPORT PERIPHERALS High Performance 32-Bit DMA Controller — 40 MBytes/sec Maximum Data Transfer Rate at 20 MHz — 8 Independently Programmable Channels DRAM Refresh Controller

Contextual Info: 0 31 DD-03182 SERIES ILC DATA DEVICE CORPORATION _ _ ARINC 429 LINE DRIVER t FEATURES DESCRIPTION The DD-03182 device is a line driver chip that transmits data on the serial data bus in accordance with the “ARINC Specification 429 Mark 33 Digital Information Transfer System”

Contextual Info: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)

Contextual Info: P82B96 DUAL BIDIRECTIONAL BUS BUFFER www.ti.com SCPS144 – MAY 2006 FEATURES • • • • • • • Operating Power-Supply Voltage Range of 2 V to 15 V Can Interface Between I2C Buses Operating at Different Logic Levels 2 V to 15 V Supports Bidirectional Data Transfer of I2C

Contextual Info: SN65LVDS33, SN65LVDT33, SN65LVDS34, SN65LVDT34 HIGHĆSPEED DIFFERENTIAL RECEIVERS SLLS490B − MARCH 2001 − REVISED NOVEMBER 2004 D 400-Mbps Signaling Rate1 and 200-Mxfr/s D D D D D D D D D D D Data Transfer Rate Operates With a Single 3.3-V Supply −4-V to 5-V Common-Mode Input Voltage

CPJ-J306-P-A-E-S-BK

Contextual Info: 1 A 2 3 4 5 6 7 8 9 A Schematic A Model No. B B B C C D Item 1 2 3 4 5 E Name Housing Earth Contact Transfer Contact Contact Make Contact Finish PA66 Black 0.25T Phosphor Bronze Silver Plated 0.25T Phosphor Bronze Silver Plated 0.25T Phosphor Bronze Silver Plated

TIL186

Contextual Info: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor

AAAG 6 pin ic

Contextual Info: I S OC OM COMPONE NTS 7SC LTD D 4flat,S10 □□□□122 7 T 1 ISO T-'il~S 5' ICPL2730 ICPL2731 Dual Low InputCurrent HighGainOpto Isolators A B SO LU TE M A X IM U M R A T IN G S 25°C unless otherwise noted FEATU RES • High Current Transfer Ratio -10 0 0% Typical

2SK386

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm

2SK526

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ?r-MOS 2SKS26 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENDOID DRIVE APPLICATIONS. 10.3MAX. 03.2±O.2 FEATURES: . Low Drain-Source ON Resistance : Rd S (ON)=0. 4 (Typ.)

L04A

Abstract: 2SK529
Contextual Info: 2SK529 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0s.e±ae FEATURES: . High Breakdown Voltage : V(gR)0gg=45OV

Contextual Info: HH'lbSüS 0013715 Ö23 • H I T 4 4 A K 2 2 HI T A C H I / OPTOELECTRONICS blE » SILICON N-CHANNEL POWER MOS FET ARRAY HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance Rds (on) ^ 0.4 f l , , = 10 V, l0 = 1.5 A Rm (on) ^ 0.55 £2 = 4 V, lD= 1.5 A

2SK388

Abstract: 2sk38
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)

Contextual Info: HAT3004R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline S O P -8 5 6 1, 3 Source 2 ,4 Gate 5, 6, 7, 8 Drain

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 Sb T O S H IBA D I S C R E T E / O P T O DE p T D T 7 E S D DDOflDDb 5òC D 08006 T-39-11 SIL IC O N N C H A N N E L M O S TYP È (7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 9 09 72 50 TOSHIBA Sb DE I ^ D ^ S D 56C 080Ó8 <DIS C R E T E/ OP TO D' DGDflGDfl T-39-11 SILICON N CHANNEL-MOS TYPE ff-MOS) INDUSTRIAL ,APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES: