TRA8 L Search Results

Contextual Info: Sta-Kon Termination Products Nylon Insulated Ring Terminals DIN 46237 Technical Information Material Copper Plating Tin-plated Marking Wire size and bolt size stamped on the tongue Metal barrel Brazed seam to prevent barrel separation Insulation PA = Polyamide

TC514400

Abstract: TCWP
Contextual Info: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4

HYM532814

Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Contextual Info: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536400 Series 4M X 36-bit C M O S DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of thirty six HY514100 In 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.

HY524400

Contextual Info: HY524400 Series »HYUNDAI 1 M x 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins

Contextual Info: PRELIM IN ARY DATA S H E E T N EC MOS INTEGRATED CIRCUIT M C -4 2 1 0 0 0 A D 7 2 F 1M-WORDBY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72F is a 1 048 576 words by 72 bits dynamic RAM module on which 4 pieces Of 16M DRAM ( li P D 4218160) and 2 pieces of 4M DRAM ( UPD424400)

Contextual Info: •HYUNDAI H Y 5 3 1 0 0 0 A 1 M x 1 - b it S e r ie s CM OS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY524400J70

Contextual Info: HY524400 Series •HYUNDAI 1Mx 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins

Contextual Info: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4

Contextual Info: •HYUNDAI HY51V4170B S e rie s 256K X 16-blt CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY51V4170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve

Contextual Info: MICRO N T E C H N O L O G Y INC b l l l S H I D D D 4 36 S Ö17 • URN 55E D ADVANCE MT4C8512/3 L 512K X 8 DF5AM MICRON 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column

ic 7493 pin diagram

Abstract: TAA111
Contextual Info: •HYUNDAI HY534256A Series 2S6KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

MC-421000A8BA

Abstract: MC-421000A8BA-70 MC421000A8BA70
Contextual Info: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT M C - 4 2 1 0 0 0 A 8 , 4 2 1 0 0 0 A 9 S E R IE S 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A8 is a 1 048 576 w o rd s b y 8 b its dyn am ic RAM m o d u le on w h ic h 2 pieces o f 4 M DRAM

Contextual Info: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,

M5M4V4260CTP-7

Contextual Info: MITSUBISHI LSIs M5M4V4260CTP-6,-7,-6S,-7S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and Is ideal

DML D01

Contextual Info: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

samsung CD-ROM pin diagram

Abstract: samsung KM41
Contextual Info: KM41 V 4 0 0 0D J ELECTRONICS CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: ••HYUNDAI H Y 5 1 1 7 4 1 0 S e r ie s 4M X 4-bit C M O S DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

Contextual Info: MT4LC2M8E7 L 2 MEG X 8 DRAM M IC R O N 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply

Contextual Info: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

s2603

Abstract: 161NE
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / jtfP D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escrip tio n The /iPD 42S 18405,4219406 are 4,104,304 words by 4 bits C M O S dynam ic R A M s with optional hyper page mode

TRA14

Abstract: CBF 420 05801 ALI-25 SALI-25C TIC85 701BR
Contextual Info: CUBIT Device CellBus Bus Switch TXC-05801 DATA SHEET FEATURES DESCRIPTION • UTOPIA or ALI-25 physical-layer cell interface • Inlet-side address translation and routing header insertion, using external SRAM • Programmable OAM cell routing • CellBus bus access request, grant reception and

ALI-25

Abstract: ALI-25C circuit diagram of queuing with seven segment
Contextual Info: CUBIT Device CellBus Switch TXC-05801 DATA SHEET FEATURES DESCRIPTION • UTOPIA or ALI-25 physical-layer cell interface • Inlet-side address translation and routing header insertion, using external SRAM • Programmable OAM cell routing • CellBus access request, grant reception and bus