TRA 1310 Search Results

Multicolor LED

Abstract: LED 7000 mcd TRA 1309
Contextual Info: TRA/TRS Series T1 Right Angle LED Bar* — RoHS Compliant *Patented Special Features • Trilevel design saves PC board space • Customized to your specifications without tooling charges Variable LED spacing, minimum .170˝, maximum bar length 6˝ Variable color sequence

IC TOP 8901

Contextual Info: TRA/TRS Series T1 Right Angle LED Bari *Patented Special Features • Trilevel design saves PC board space • Customized to your specifications without tooling charges Variable LED spacing, minimum . 170', maximum bar length 6" Variable color sequence • Shrouded version available for backlighting

TRA 1310

Contextual Info: MITSUBISHI LASER DIODES ML7XX10 S E R IE S InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, s ingle hig h power tra nsverse w ith em ission w avelen gth o f 1310nm and la s e r

1310nm otdr

Abstract: ML7XX10 H Beam
Contextual Info: MITSUBISHI LASER DIODES ML7XX10 SERIES InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, s ingle hig h power tra nsverse w ith em ission w avele ngth o f 1310nm and la s e r m ode

Contextual Info: MITSUBISHI LASER DIODES ML7XX10 SERIES InGaAsP — MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L7XX10 w hich FEATURES s e rie s provide a are In G a A sP stable, sin g le h ig h power tra nsverse w ith em ission w a vele ngth o f 1310nm and la s e r

Contextual Info: TRA/TRS Series T1 Right Angle LED Bar* *Patented Special Features • Trilevel design saves PC board space • Customized to your specifications without tooling charges Variable LED spacing, minimum . 170", maximum bar length 6" Variable color sequence • Shrouded version available for backlighting

Multicolor LED

Abstract: TRA 1309 top 8901 3mm bicolor led 3mm bicolor led blue led 3mm LED 7000 mcd
Contextual Info: TRA/TRS Series T1 Right Angle LED Bar* *Patented Special Features • Trilevel design saves PC board space • Customized to your specifications without tooling charges Variable LED spacing, minimum .170˝, maximum bar length 6˝ Variable color sequence • Shrouded version available for backlighting

Contextual Info: TRA/TRS Series T1 Right Angle LED Bar* *Patented Special Features • Trilevel design saves PC board space • Customized to your specifications without tooling charges Variable LED spacing, minimum .170˝, maximum bar length 6˝ Variable color sequence • Shrouded version available for backlighting

mj413

Contextual Info: MOTOROLA SC XSTRS/R F ia E D I b3fa?55M M | MJ413 MJ423 MJ431 MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE NPN SILICON TRA N SISTO RS 10 AM PERE POWER TRAN SISTO RS NPN SILICON . . . designed fo r m edium -to-high voltage inverters,converters, regulators and sw itching circuits.

Contextual Info: MITSUBISHI LASER DIODES ML7XX8 SERIES InGaAsP — MQW— FP LASER DIODES ML701 B8R,ML725B8F,ML725C8F ML720J8S.ML720K8S TYPE NAME DESCRIPTION FEATURES M L 7 X X 8 series a re In G a A s P s ta b le , s in g le w a v e le n g th tra n s v e r s e of 1310nm laser diodes which provides a

uln buffer

Abstract: ic. uln 2003 Darlington pair IC single Darlington pair IC high current ULN2003 PIN configuration high current Darlington pair IC ULN2003 ULN2003 ac VLN 2003 uln series
Contextual Info: ANALO G DIVISION MARCH 1982 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEM ATICS These high-voltage, h ig h -cu rre n t D arling ­ ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on

Contextual Info: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W * — D F B * laser diod es em itting •L o w th resho ld cu rre n t typical 10m A • S t a b le single tra nsverse m ode oscillation

ULN2003 ac

Abstract: ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration
Contextual Info: MARCH 1982 ANALO G DIVISION ULN2001/03/04 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEMATICS PIN CONFIGURATION These high-voltage, h ig h -cu rre n t D arling ­ ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on

B 8F laser diodes

Contextual Info: MITSUBISHI LASER DIODES ML7XX8 SERIES InGaAsP— MQW— FP LASER DIODES ML701 B8R,ML725B8F,ML725C8F ML720J8S,ML720K8S TYPE NAME DESCRIPTION FEATURES M L7X X8 serie s are InG aA sP laser diod es w hich provides a s ta b le , s in g le w avele ngth tra n s v e rs e

pcc 189

Abstract: sg sf sm texas instrument Audio Processor with Pushbutton ds2501 Wiring Diagram thermostat NC 40 NC 90 national semiconductors book clock traffic light signal control using microcontroller pic thesis sram book DS21530
Contextual Info: 2 2 > - ft DALLAS W W SEMICONDUCTOR C opyright 1995 by D allas S em ico n d uctor C orporation. A ll R ights R eserved. D allas S em ico n d uctor retains all ow n e rsh ip rights in th e te ch n olo gy described herein. Tradem arks and registered tra d e m a rks of D allas S em ico n d uctor include each of th e fo llo w in g :

Contextual Info: SN74ACT8837 64-Bit Floating Point Unit • M u ltip lie r and A L U in One Chip • 6 5 -n s P ipelined P erfo rm a nce • L o w -P o w e r EPIC C M O S • M e e ts IEEE Standard fo r 3 2 - and 6 4 -B it M u ltip ly , A d d , and S u b tra c t • Three-Port A rc h ite c tu re , 6 4 -B it In te rn a l Bus

Contextual Info: FIELD PORTABLE CHROMATIC DISPERSION MEASUREMENT SYSTEM • O ptim ised for DWDM ap p lic atio n s • F u lly p o rtab le for field and netw ork testing: • H igh sp eed • D ynam ic ra n g e up to 40 dB • 1310 nm, 1550 nm and L-band operation • A pplicable to a ll sin g le mode fib e rs in clu d in g NDS, DS

Contextual Info: F U JIT S U PROGRAMMABLE BICMOS 131072-B IT READ ONLY MEMORY M B 7 1 C 4 6 -3 5 M B 7 1 C 4 6 -4 5 A u gust 1988 Edition 2.0 Bi-CMOS 131072-BIT DEAP PROM 16384 WORDS x 8 BITS The Fujitsu M B71C46 is high speed BICMOS T T L ele c tric a lly field p rogram m ab le read

MB71C46-45M

Abstract: MB71C46-35 sam plus
Contextual Info: PROGRAMMABLE FU JITSU BICMOS 131072-BIT READ ONLY MEMORY MB71C46-35 MB71C46-45 A u g u st 1988 Edition 2.0 B i-C M O S 131072-B IT DEAP PROM 16384 WORDS x 8 BITS The Fujitsu M B71C46 is high speed BICMOS T T L ele ctrica lly field prog ra m m a b le read

Contextual Info: MITSUBISHI LS Is iMttNtftfM5M5V12R88CJ,TP-10,-12,-15 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5M 5V 12R 88C is a fam ily o f 131072-w ord by 8 -b it static RAM s, fab rica ted w ith the high perform ance C M O S silicon gate

HM66204L

Abstract: HM66204
Contextual Info: Maintenance Only HM66204 Series 131072-word x 8-bit High Density CMOS Static RA M Module The H M 6 6 2 0 4 is a high density 1 M bit static R A M module consisted of 4 pieces of H M 6 2 2 5 6 F P / L F P products SO P type 256k static R A M and a H D 7 4 H C 1 3 8 F P equivalent product (SO P

MK68590

Abstract: 82588 generation circuit of manchester 1N914 MK5035N delay echo circuit diagram Industrial Products mostek Mostek counter
Contextual Info: THOMSON MK5035N COMPONENTS Z S ta r L A N E N C O D E R D E C O D E R V MOSTEK C O M M U N IC A T IO N S P R O D U C T S FEATURES C C onform s w ith StarLAN specification. C Auto com pensation for line reversal. □ C om patible w ith M ostek M K68590 LAN C E and In­

MK68590

Abstract: differential manchester encoder generation circuit of manchester differential manchester 1N914 MK5033 MK5033P decoder manchester differential manchester decoder
Contextual Info: Ih.SM AkM MK5033 COMPONENTS M A N C H E S T E R E N C O D E R /D E C O D E R C O M M U N IC A T IO N S P R O D U C T S FE A TU R ES C C onform s to StarLAN sp ecifications. [._• Auto com pensation for line reversal. □ C om patible w ith m ost E thernet co n tro lle r chips.

DRAWING S493

Contextual Info: NEC O 0D-S493 1310m F P - L D M o d u l e w i t h b u i l t - i n opti c a l is o l a t o r FEATURES O p e r a t i n g fre quency range D i sto rtion f=5MHz to 200MHz I M D 2 S -53dBc I M D 3 S -53dBc Noi se Optical output power Wavelength O p e r a t i o n over wide temperature