TR IGBT Search Results

pj 87 diode

Abstract: diode pj 87 pj 66 diode PJ+906+lv 0/pj 87 diode
Contextual Info: SK30GD066ET ?- O TR U$Q 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$VW ?X O TR U$ @$ ?X O I[R U$ @$¥] *'-) ZJJ L NJ C ?- O [J U$ PI C ZJ C ^ TJ L ?X O IRJ U$ Z b- ?- O TR U$ PZ C ?- O [J U$ Tc C ZJ C IZJ C @$¥]O T : @$0%&

c959

Abstract: IRGPC50KD2
Contextual Info: IOR IRGPC50KD2 Electrical Characteristics T j = 25°C unless otherwise specified Parameter Switchin g Characteristics @ T j = tr WiofO t( Eon E oH Ete ts c td(on) tr td(off) tf Ete Le C»s Coes C re s trr Min. Typ. Max. Units Total Gate Charge (tum-on)

Contextual Info: Gl ÖJ Technische Information / Technical Information BSM10GP120 vorläufige Daten preliminary data E le k tr is c h e E ig e n s c h a fte n Höchstzulässige W erte / / E le c tr ic a l p r o p e r tie s Maximum rated values Diode G leichrichter/ Diode Rectifier

transistor t2a surface mount

Abstract: A506 ed1b a506 diode STTA506B a506b
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTA506B(-TR) TURBOSWITCH " A " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.5V V f (max) tr r (typ) PRELIMINARY DATASHEET 20 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

CM400DU-24NFH

Contextual Info: Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM400DU-24NFH Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr 101

CM300DY-24NFH

Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM300DY-24NFH Dual IGBTMOD NFH-Series Module 300 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr VCC = 600V

bsm25gp120

Contextual Info: GL ÖJ Technische Information / Technical Information BSM25GP120 H l ÿ vorläufige Daten preliminary data E le k tr is c h e E ig e n s c h a fte n / E le c tr ic a l p r o p e r tie s H ö ch stzu lä ssig e Werte / Maximum rated valu es Diode G leichrichter/ Diode Rectifier

CM300DU-24NFH

Contextual Info: Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM300DU-24NFH Dual IGBTMOD NFH-Series Module 3 00 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr VCC = 600V

Contextual Info: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

Contextual Info: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

CM600DU-24NFH

Contextual Info: Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM600DU-24NFH Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tr tf 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C

RJP30h1

Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.

Contextual Info: JULY 1996 GP400LSS12S ADVANCE ENGINEERING DATA DS4137-6.2 GP400LSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 400A IC(CONT) 800A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP2000FSS06S ADVANCE ENGINEERING DATA DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 2000A IC(CONT) 4000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: IGBT MODULE 7^1243 DOOnAO 2fll GSA400AA60 SanRex IGBT Module GSA400AA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode tr r = 0 . 1/zs reverse connected across each IGBT.

Contextual Info: JULY 1996 GP1000DHB06S ADVANCE ENGINEERING DATA DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 1000A IC(CONT) 2000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP500LSS06S ADVANCE ENGINEERING DATA DS4324-3.1 GP500LSS06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 500A IC(CONT) 1000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.

RJP30H1DPD

Abstract: rjp30h1 rjp30 rjp30H
Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.

Contextual Info: JULY 1996 GP300LSS16S ADVANCE ENGINEERING DATA DS4136-5.2 GP300LSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A IC(CONT) 600A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP600DHB16S ADVANCE ENGINEERING DATA DS4335-4.2 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 600A IC(CONT) 1200A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.

M217

Contextual Info: IGBT 600 VOLT, F-SERIES MODULES • Low saturation voltage Vces . DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES 1MBI300F-060 1MBI400F-060 :ic ; VcE sat VGe = 15V Switching Time (Max.) Max. lc ton . :iott;!."" tr.

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

RJH30H1

Contextual Info: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.