C30817E
Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,
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c3065912-leadc30817ehc30902eh+7c30954ehc30956ehc30645ehc30662ehc30950c30817edatasheet apd 1550
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C30902E
Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
Contextual Info: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems
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74fl4b75dddd133c30904ec30905e+5c30908ec30902eavalanche photodiodesc30817c30916e
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Contextual Info: E G & G/CANA DA/OPTO ELE K ItC Jl 3G3GblO 00ÜG123 354 « C A N A ID Electro Optics and Devices Photodiode Developmental Type C30900E _ T - H t - S " } P-Type Silicon p-i-n Photodetector • Wide Range of Operating Voltage —
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C30904E
Contextual Info: E G & G/CANADÁ/OPTOELEK 10 î> m 3Q3GblD DG00133 2T 3 * C A N A C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Designed Especially for Optical Communication Systems Simplified Coupling to Fiber Optics
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A1013 equivalent
Abstract: C30900E A1013
Contextual Info: E G & G/CANADA/OPTOELEK I f G i l 3 G 3 GblO ID 0 0 0 G123 Electro Optics and Devices 354 • CANA Photodiode Developm ental Type C30900E _ T - H l - f t £ P-Type Silicon p-i-n Photodetector Wide Range of Operating Voltage —
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C30902S
Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Contextual Info: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip
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c30902ec30902sc30921ec30921s+6geigerperkinelmer avalanche photodiodegeiger counteravalanche photodiode c30902eperkinelmer triggeravalanche photodiode bias
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Contextual Info: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava
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C30902E
Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
Contextual Info: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications
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c30902ec30902sc30921ec30921s+8l-571l-933avalanche photodiode c30902ec30902740417geigerrca transistorrca power transistor
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C30902E
Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
Contextual Info: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon
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c30902ec30902sc30921ec30921s+11c30902bstc30902bfc30902ec30902e/sc30921e/seg*g optoelectronicsavalanche photodiodesavalanche photodiodec30902geigerc3090
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C30902EH
Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This
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C30902SH-DTC
Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the
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c30902ehc30921ehc30902sh-dtcperkinelmer avalanche photodiode+7apd, laser, range, finderc30902geiger apdc30902shperkinelmer mode ac3092sh-tcperkinelmer trigger mode
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C30902EH
Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as
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c30902ehc30921ehdts0408c30902sh-dtc+7perkinelmer avalanche photodiodegeiger apdavalanche photodiodesgeigerc30902apd, laser, range, finderavalanche photodiode ghz
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C30902S
Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava
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c30902ec30902sc30921ec30921s+9l-571l-933diode c309rangefindingtr c3090c30902dead time for the detector c30902geiger counteravalanche photodiode bias
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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cat0506pfnd-100qfnd-100c30724e+7yag-444-4aingaas apd quadrantperkinelmer fnd-100qsi apd photodiodenir emitter leds with 700 to 900 nmspcm-aqrc30950e
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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c30659c30659-900-1060-1550nm1100nm1700nm+1212-leadc30817comdiode d1n914d1n914 dioded1n914c30817ec30659-1550-r2aingaas pin photodiode, 1550 nepc30950silicon and ingaas apd preamplifier modulesc30954eavalanche photodiode 1550nm sensitivity
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C30817E
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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c30659c30659-900-1060-1550nm1100nm1700nm+312-leadc30omc30817e
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C30817E
Abstract: SILICON APD Pre-Amplifier
Contextual Info: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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c30659900/1060/1550/1550e-1550ec30817eh+7c30902ehc30954ehc30956ehc30645ehc30662ehc30817esilicon apd pre-amplifier
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Contextual Info: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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090Q
Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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303dbl0c30998--h/-67c30998-xxxqc-yy+14l-1075c30998-xxx14-pinc30902ed-0016/02/88090qpreamplifier transimpedance optic fetrca 514qc-0430080 46spectranc30998-010c30998-250303db
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Contextual Info: E G 8. G/C AN AD A /O P TO EL E K ID 3 G 3 G b lO D DD00171 D07 ICANA Silicon Avalanche Photodiodes H C Ü C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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PerkinElmer Avalanche Photodiode
Abstract: C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode C30737
Contextual Info: Description The C30737 type avalanche photodiode provides high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameter of the photosensitive surface is 0.5mm.
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c30737500nm1000nmmil-std-883+11mil-std-750dts0206c30737ehperkinelmer avalanche photodiodec30902c30902sperkinelmer optoelectronicsc30902eavalanche photodiode bias and high voltagec30737e-500photodiode avalanche photodiode
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c4460
Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4
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1503/c1565/c1574/c1590/c+161616/c1654/cc38201782/cb1235/dc3151c4460d1651d1047k d1047b817c2621d1650b1269c4106d895
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1736a
Abstract: xc1736 die
Contextual Info: XC3000 Logic CeU Array Family Product Specification FEATURES The LCA user logic functions and interconnections are determined by the configuration program data stored in internal static memory cells. The program can be loaded in any of several modes to accommodate various system
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dinverter 768r
Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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hef4527bthef4531bthef4534bphef4534bt+16msp-stk430x320ad9054/pcbad9054bst-135ips521gips521sirl2203sdinverter 768rg7d-412sericsson installation guide for rbs 6201omron g7dth3 thermistor6201 rbs ericsson user manualtms77c82nlreed relay rs 349-355i ball 450 watt smps repairingrbs -ericsson 6601
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