TR 308 OF Search Results

Contextual Info: CRYSTAL UNIT TUNING FORK CH-308 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer tR o H S • ELECTRICAL SPECIFICATIONS

Contextual Info: INCH MM .0015 .005 013 030 045 049 060 100 125 170 0.04 0.13 0.33 0 .76 1 1 .24 .52 2.54 3. IB 4 .32 5.08 7.49 7.82 10.16 10.92 12.70 IB. 34 200 295 308 .400 .430 500 .722 RED INDICATES ORIGINAL DATA CONT AI NE O IN THIS DOCUMENT IS PROPRIETARY TÛ TR OMPETER ELECTRONICS INC.

Contextual Info: PRELIMINARY  5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability  Optimized turn-off parameters Applications  Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 378

Contextual Info: PRELIMINARY  5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability  Optimized turn-off parameters Applications  Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 322

LM308 pin configuration

Abstract: pin diagram of LM308 Op Amp IC lm308 equivalent LM30B LM108 EQUIVALENT LM308N LM308 LM101 LM108A LM108AH
Contextual Info: S C S -TH O M SO N LM108/A - LM208/A LM308/A PRECISION SINGLE OPERATIONAL AMPLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE : 0.5mV MAXIMUM ■ INPUT BIAS CURRENT : 3nA MAXIMUM OVER FULL TEMPERATURE RANGE ■ INPUT OFFSET CURRENT : 0.4nA MAXI­

Contextual Info: SEMICONDUCTOR KRA307~KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D G ・Reduce a Quantity of Parts and Manufacturing Process

E88LM

Abstract: LM308 pin configuration lm308 equivalent lm308 LM108A
Contextual Info: r z 7 Ä 7# S G S -T H O M S O N L M 1 0 8 , A - L M 2 0 8 ,A L M 3 0 8 ,A PREC ISIO N SINGLE O PERATIO NAL AM PLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE: 0.5 mV MAXIMUM ■ INPUT BIAS CURRENT: 3 nA MAXIMUM OVER FULL TEMPERATURE RANGE

ATTP1

Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EZIWSON Approved PKU 4000 Direct Converters SEC/D (Julia series You) 1 (1) (4) No. Checked Input 36-75 V, Output up to 25 A / 50 W 1/1301-BMR 001 52-EN/LZT

Contextual Info: Limited EricssonInternal Internal TABLE PRODUCT OF CONTENTS SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 001 1/1301-BMR 52-EN/LZT 602146 Uen 308 Uen Specification

TB 1225 EN

Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 1/1301-BMR 001 52-EN/LZT 602146 Uen 308 Uen Specification

PKU 4513

Abstract: 4511 MOSFET ci 4511 ICT PRC 22.10 PKU 4510 ICT PRC Thermal Shut Down Functioned MOSFET rc 4513 Alice su 550
Contextual Info: EricssonInternal Internal Limited PRODUCT SPECIFICATION TABLE OF CONTENTS E Prepared also (also subject subject responsible responsible ifif other other) Prepared EZHIXZH SEC/S Kevin Zhou Approved Approved PKU 4000 Series SEC/D (ALICE SU) 1 (1) (3) 1 No.

MMVL2101T1

Abstract: 65t marking
Contextual Info: MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning

4511 mosfet

Contextual Info: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other SEC/S Kevin Zhou Approved PKU 4000 & -SI series SEC/S Kevin PI Zhou 1 (1) (3) No. 1/1301-BMR 001 52-EN/LZT 602146 Uen 308 Uen Specification

Contextual Info: r z ^ T 7 # S C S - T H O M S O N L M 1 0 8 , A - L M 2 0 8 , A R Æ O O M IL Œ C T M M S L M 3 0 8 , A PRECISION SINGLE OPERATIONAL AMPLIFIERS Outstanding characteristics of LM108A : • INPUT OFFSET VOLTAGE: 0.5 mV MAXIMUM ■ INPUT BIAS CURRENT: 3nA MAXIMUM OVER

Contextual Info: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M60L2VR

Abstract: 77A DIODE
Contextual Info: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT60DF60

Abstract: 77A DIODE APT50M60L2VFR diode 77a
Contextual Info: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

JLC1563

Abstract: JLC1563M JLC1563ML1 JLC1563P 1JLC1563ML1 SCL MARKING
Contextual Info: JLC1563 I2C Bus Transceiver JLC1563 is an I2C–bus signal transceiver and “conditioner’’. Currently, systems complexity and I2C–bus device types and functionality are only increasing. As a result of I2C–bus loading the Clock line and Data line signals degrade. The JLC1563 I2C–Bus

4318H

Abstract: MOSFET 4418 4418G
Contextual Info: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other (MICPJWI) MICPJWI Approved PKU 4000 PI seriesAnderzén] MPM/BK [Margaretha 1 (1) (3) No. Checked 001 1/1301-BMR 52-EN/LZT 602146 Uen 308 Uen Specification

analog PIN Photodiode 3GHz

Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM
Contextual Info: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector

221D

Abstract: BUT11AF
Contextual Info: ON Semiconductort FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to

APT55M50JFLL

Contextual Info: APT55M50JFLL 550V POWER MOS 7 R FREDFET VDSS ID S 27 2 T- D G SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.050Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

ML9478

Abstract: ML9478DVWA 12 pin 7 segment display layout -LD-5461BS 12 pin 7 segment display pin diagram SEG40 SEG80
Contextual Info: FEDL9478-01 Issue Date: Aug. 12, 2010 ML9478 Static, 1/2 Duty, 1/3 Duty, 1/4 Duty 80 Outputs LCD Driver GENERAL DESCRIPTION The ML9478 is a LCD driver LSI, consists of an 80-bit shift register, a 320-bit data latch, 80 sets of LCD drivers, and a common signal generation circuit.

ML9478

Abstract: segment driver 130hz
Contextual Info: FEDL9488-01 Issue Date: Jan. 15, 2013 ML9488 Static, 1/2 Duty, 1/3 Duty, 1/4 Duty 80 Outputs LCD Driver GENERAL DESCRIPTION The ML9488 is an LCD driver LSI, consists of a 80-bit shift register, a 320-bit data latch, 80 sets of LCD drivers, and a common signal generation circuit.