TR 10N60 Search Results

SGW10N60RUFD

Abstract: igbt 300V 10A
Contextual Info: C O -P A K IG B T SGW 10N60RUFD FE A TU R ES D2-PAK * Short Circuit rated 10uS @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=1 OA * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) 4* A P P LIC A TIO N S

10N60P

Abstract: g 10N60 TJM 10
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V = 10 A ID25 Ω RDS on ≤ 740 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

10N60K

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60G

Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

tf 10n60

Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

10N60G TO-220F

Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

UTC10N60

Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

10N60G TO-220F

Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 10N60K Preliminary Power MOSFET 1 0 A, 6 0 0 V N -CH AN N EL POWER M OSFET  1 DESCRI PT I ON The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

mosfet 10a 600v

Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UTC10N60

Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

IXTP10N60PM

Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

10N60PM

Abstract: IXTP10N60PM
Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

MOSFET IXYS TO-263

Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions

10N60C5M

Abstract: kw0649 IGBT GS c16tj 10N60C
Contextual Info: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions

10N60C

Abstract: C3525
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET

10N60C

Abstract: 10N60C5M
Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions