TR 0431 Search Results

SML-LX0603USBW-TR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SML-LX0603USBW -TR - 1,60 [ 0 , 0 6 3 ] - 1,08 tO.0431] m m -. STATIC S F N S fM o p ^cf FOLLOW PROPER E S D . HANDLING PROCEDURES WHEN WORKING WITH THIS PART, 0,80 [0,0 31] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T

Contextual Info: UNCONTROLLED DOCUMENT - 1,08 0 ,8 0 1,60 PART NUMBER REV. SML-LXQ603SOW-TR [0 ,0 6 3 ] - tO.0431] [0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER CATHODE 1.20 PEAK WAVELENGTH REVERSE VOLTAGE R E S IN 0 ,5 0 REFLOW PROFILE [0 ,0 2 0 ] I [0 .012]

Contextual Info: UNCONTROLLED DOCUMENT - 1,08 0 ,8 0 1,60 PART NUMBER REV. SML-LX0603SPGW -TR [0 ,0 6 3 ] - tO.0431] [0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER CATHODE 1.20 PEAK WAVELENGTH REVERSE VOLTAGE R E S IN 0 ,5 0 REFLOW PROFILE [0 ,0 2 0 ] I [0 .012]

SML-LX0603SUGW-TR

Contextual Info: UNCONTROLLED DOCUMENT - 1,08 0 ,8 0 1,60 PART NUMBER REV. SML-LX0603SUGW-TR [0 ,0 6 3 ] - tO.0431] [0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER CATHODE 1.20 PEAK WAVELENGTH REVERSE VOLTAGE R E S IN 0 ,5 0 REFLOW PROFILE [0 ,0 2 0 ] I [0 .012]

SML-LX0603SIW-TR

Contextual Info: UNCONTROLLED DOCUMENT - 1,08 0 ,8 0 1,60 PART NUMBER SM L-LX0603SIW -TR [0 ,0 6 3 ] - tO.0431] [0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER CATHODE 1.20 MIN PEAK WAVELENGTH REVERSE VOLTAGE R E S IN 0 ,5 0 REFLOW PROFILE [0 ,0 2 0 ] I [0 .012]

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SM X-LX0805GC-TR 2 .0 0 1 0 .2 0 CO. 07 9+0.0 08: 1,2510.20 [0.04910. D08] CATHODE ANODE U .O U 1.40 [0 .055 ] - 1 1,10^=0,10 [0 .04310.004] ELECTRO-OPTICAL CHARACTERISTICS Ta =25X LU. U L C J 2 J P L S . Y_ 1 REFLOW PROFILE

043II

Abstract: SML-LX0603SYW-TR
Contextual Info: UNCONTROLLED DOCUMENT - 1,08 1 ,6 0 [ 0 ,0 6 3 ] - tO.0431] REV. PART NUMBER REV. SML-LX0603SYW-TR B E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N. #10BRDR. & REDRAWN. 9 .3 0 .9 B B E.C.N. # 1 0 6 4 4 . 7 .1 8 .0 0 0,80 [ 0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T

SML-LX0603IW-TR

Contextual Info: UNCONTROLLED DOCUMENT - 1,60 [ 0 , 0 6 3 ] - PART NU M BER REV. SM L-LX0603IW -TR B 1,08 tO.0431] REV. 0,80 E.C.N. NUM BER AND A E.C.N. #10BRDR. B E.C.N. #10644. R E V IS IO N DATE REDRAW N. & 9 .3 0 .9 B 7 .1 8 .0 0 [0 ,0 3 1 ] ELECTRO -OPTICAL CHARACTERISTICS Ta = 25 T

D410

Abstract: SML-LX0805SPGC-TR
Contextual Info: UNCONTROLLED DOCUMENT 2 . 0 0 1 0 .2 0 CO. 07 9+0.0 08: REV. A B C 1,2510.20 [0.04910. D08] PART NUMBER REV. SML-LX0805SPGC-TR c E.C.N. E.C.N. E.C.N, E.C.N. NUMBER AND REVISION COMMENTS #10862. #10967. #11148. DATE 5.9.02 3.14.03 1.17.05 ^ CATHDDE MARK ANODE

PKZ204G

Abstract: 200B 5703022
Contextual Info: MI CR OC ON TR OL LE RS BULLETIN BOARD SYSTEM AP S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS MEMORY PRODUCTS USER’S GUIDE The Embedded Control Solutions Company Microcontrollers • Non-Volatile Memories • ASSPs MICROCHIP BBS SUPPORT Table of Contents

ic tdk 2030

Abstract: CB30-0805 CB-30 CB-50 CB30-1206 TR 0431 CB50 TDK
Contextual Info: CHIP FERRITE FERRITE CHIP BEADS EMI Suppression Chip Bead CB SERIES T h e C B s e r i e s i s a b ig b d e n s i t y f e r r i t e c h i p E M I s u p p r e s s i o n d e v i c e U s u a lly t h e s e d e v ic e s a r r u s e d a s a s o lu t io n t o p r e v e n t E M I b e t w e e n e le c tr o n ic c ir c u its .

maxim 7555

Abstract: ICM75551PA icm 7556 timer ICM7555MTV cm7555 ICM7565 ICM7656 pulse position modulation using 555 555 timer single shot pulse generator 7555 ID
Contextual Info: 19-0431; Rev 2; 11/92 y u y jx iy k i General Purpose Timers These C M O S low-power devices offer significant per­ form ance advantages over the standard 5 5 5 and 5 5 6 bipolar timers. Low-power consumption, combined with the virtually non-existen t current, spike during output

SML-LX0603UPGW-TR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L -L X 0 6 0 3 U P G W -T R - 1,60 [ 0 , 0 6 3 ] - 1,08 tO.0431] m m -. STATIC S F N S fM o p ^cf FOLLOW PROPER E S D . HANDLING PROCEDURES WHEN WORKING WITH THIS PART, 0,80 [0,0 31] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T

5330N

Abstract: 5330-10BGS17F MOLEX micro pin ic cd 4074 uc 3808 ym 2406 05fJ cd 4074 B ic 4486 PM 5509
Contextual Info: 10 1.52 i0J 16.3*0-3 .0601.004 “ 0 3 . I ±0J (.1221.004) 0 1.110-05 (.0431.002) -i^r • -H 1-1 =2 < a; LD 2 CNJ* 3 2=54 $ ±0.1 U00±o004) RECOMMENDED P.C.BOARD HOLE LA Y O U T (.mmm) (P A R T S CODE:» A « G S I7 F G S 2 7 F G S 3 7 F YELLOW * £15

rgn 1064

Abstract: vergleichsliste mo465 telefunken hr 660 tungsram Ubf 11 TK4100 RGN2004 Telefunken g-2504 Telefunken ebf 11
Contextual Info: ' RÖHRENDATEN für Schule u, Werkstatt y ^ 1. VergleichstabeSIe F 2, Austauschliste Ausgabe 1928— 1945 . ' *en W ü n schen v ie le r Interessenten, en tsp rech en d , bringen w ir mit n ach fo lg e n d e r A ufstellung eine Vergleichsliste d e r e u ro p äisch en Röhren so w ie eine Austaüschrtste* die

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-04310 Spec Title: CY7C1308DV25C, 9-MBIT DDR I SRAM 4WORD BURST ARCHITECTURE PRELIMINARY Sunset Owner: Jayasree Nayar Replaced By: NONE PRELIMINARY CY7C1308DV25C 9-Mbit DDR I SRAM 4-Word Burst Architecture Functional Description

DIODE ZENER BZW 06

Abstract: BZW 04-40B B DIODE ZENER BZW 04 diode bzw 06 04-19B 0419B 0415B diode bzw 90 04-213B DIODE ZENER BZW bipolar
Contextual Info: BZW04-5V8 B / 376(B) SERIES Transient Voltage Suppressor Diodes Voltage Range 5.8 to 376 Volts 400 Watts Peak Power DO-41 Features a a a a a a a a a UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0

TC59RM716GB

Abstract: 9T20T
Contextual Info: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx 18x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

Silicon Photocells

Abstract: VTS7070A uv led 365 vactec photodiode 21 187 UV Photodiode Vactec TR 0431 UV source led 220nm photodiode VTS VTS70
Contextual Info: VTS-3 PROCESS SUPER BLUE ENHANCED LARGE AREA PHOTODIODE FEATURES P R O D U C T DESCRIPTION • • • • • • • This series of P on N large area silicon diodes is intended for use in the photovoltaic m ode. These devices have excellent response in the UV region

weidmuller fuse

Abstract: litz wire 36 awg 1N4007 BL pcb connectors 1N4007 catalog weidmuller 2007 3M Philippines 3M Touch Systems PDIC blue h05 diode
Contextual Info: Terminal blocks with Push In connection technology Product Information Contents Terminal blocks with Push In connection technology Overview 4 Feed-through terminals 6 Feed-through PE terminals 9 Dual-level terminals 12 Dual-level PE terminals 14 Dual-level terminals PDL 4

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D 7 4 b b fiS l 0 0 0 4 3 1 b European “Pro Electron” Registered Types 4TS CNY47, CNY47A Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY47 a n d CNY47A are gallium arsenide, in frared

IC-321B

Abstract: p421e P421E-400A
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT jUPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ^ P D 4 2 S 1 6 1 6 0 L , 4216160L, 42S 18 1 6 0 L , 4 2 1 8 1 6 0 L are 1,048, 576 w ords by 16 bits C M O S dyna m ic RAMs.