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    TPCF8 Search Results

    TPCF8 Datasheets (69)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TPCF8001
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPCF8001
    		Toshiba MOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (max 0.031) (max 0.023); I_S (A): (max 7) Original PDF 283.1KB 7
    TPCF8001
    		Toshiba MOSFET TPC Series Scan PDF 230.14KB 4
    TPCF8003
    		Toshiba Transistors - Mosfets Original PDF 232.57KB 7
    TPCF8003
    		Toshiba Japanese - Transistors - Mosfets Original PDF 288.47KB 7
    TPCF8003
    		Toshiba TPCF8003 - TRANSISTOR 7000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-3U1A, 8 PIN, FET General Purpose Small Signal Original PDF 232.58KB 7
    TPCF8004
    		Toshiba Transistors - Mosfets Original PDF 234.29KB 9
    TPCF8004
    		Toshiba Japanese - Transistors - Mosfets Original PDF 324.35KB 9
    TPCF8004
    		Toshiba TPCF8004 - Nch VDSS =30V Original PDF 234.3KB 9
    TPCF8101
    		Toshiba power MOSFET Original PDF 182.19KB 6
    TPCF8101
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPCF8101
    		Toshiba Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (max 0.085) (max 0.04) (max 0.028); I_S (A): (max -6) Original PDF 254.76KB 7
    TPCF8101(TE85L,F,M
    		Toshiba TPCF8101 - X35 PB-F POWER MOSFET TRANSISTOR VS-8 MOQ=4000 V=-12 PD=2.5W Original PDF 223.16KB 7
    TPCF8101(TE85L,F,M
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A VS-8 Original PDF 6
    TPCF8102
    		Toshiba Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Original PDF 225.98KB 7
    TPCF8102
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPCF8102(TE85L,F,M
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A VS8 2-3U1A Original PDF 7
    TPCF8103
    		Toshiba MOSFET TPC Series Original PDF 73.86KB 4
    TPCF8103
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPCF8103
    		Toshiba Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; R DS On (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7) Original PDF 299.14KB 7
    SF Impression Pixel

    TPCF8 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TPCF8A01(TE85L)

    MOSFET N-CH 20V 3A VS-8
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    DigiKey TPCF8A01(TE85L) Tape & Reel 4,000
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    Toshiba America Electronic Components TPCF8402(TE85L-F-M

    MOSFET N/P-CH 30V 4A/3.2A VS-8
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    Toshiba America Electronic Components TPCF8102(TE85L-F-M

    MOSFET P-CH 20V 6A VS-8
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    Toshiba America Electronic Components TPCF8B01(TE85L-F-M

    MOSFET P-CH 20V 2.7A VS-8
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    Toshiba America Electronic Components TPCF8304(TE85L-F-M

    MOSFET 2P-CH 30V 3.2A VS-8
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    TPCF8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TPCF8402

    Contextual Info: TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)


    Original     		TPCF8402 TPCF8402 PDF

    TPCF8301

    Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8301 TPCF8301 PDF

    toshiba f5d

    Abstract: TPCF8304
    Contextual Info: TPCF8304 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIV TPCF8304 ○ ノートブックＰＣ用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 5.9S (標準)


    Original     		TPCF8304 toshiba f5d TPCF8304 PDF

    TPCF8201

    Contextual Info: TPCF8201 東芝電界効果トランジスタ シリコンＮチャネルMOS形 U-MOSIII TPCF8201 ○ 携帯電子機器用 単位: mm ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS(ON) = 38 mΩ (標準)


    Original     		TPCF8201 TPCF8201 PDF

    2A101

    Abstract: TPCF8101
    Contextual Info: TPCF8101 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8101 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 22 mΩ (標準)


    Original     		TPCF8101 2A101 TPCF8101 PDF

    TPCF8102

    Contextual Info: TPCF8102 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8102 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 24 mΩ (標準)


    Original     		TPCF8102 TPCF8102 PDF

    MCV MOSFET

    Abstract: TPCF8A01
    Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		TPCF8A01 MCV MOSFET TPCF8A01 PDF

    TPCF8402

    Contextual Info: TPCF8402 シリコンP,NチャネルMOS形 U-MOS IV / U-MOS III 東芝電界効果トランジスタ TPCF8402 ○ 携帯電子機器用 単位: mm ○ モータドライブ用 ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。


    Original     		TPCF8402 20070701-JA TPCF8402 PDF

    TPCF8102

    Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		TPCF8102 TPCF8102 PDF

    TPCF8B01

    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8B01 TPCF8B01 PDF

    Contextual Info: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)


    Original     		TPCF8305 PDF

    TPCF8303

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 TPCF8303 PDF

    TPCF8201

    Abstract: ta202
    Contextual Info: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		TPCF8201 TPCF8201 ta202 PDF

    47S marking code transistor

    Abstract: TPCF8103
    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		TPCF8103 47S marking code transistor TPCF8103 PDF

    toshiba f5b

    Abstract: TPCF8302 toshiba f5b data sheet
    Contextual Info: TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8302 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mÙ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.)


    Original     		TPCF8302 toshiba f5b TPCF8302 toshiba f5b data sheet PDF

    TPCF8102

    Abstract: A2430
    Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		TPCF8102 TPCF8102 A2430 PDF

    Contextual Info: TPCF8105 MOSFETs Silicon P-Channel MOS U-MOS TPCF8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V)


    Original     		TPCF8105 PDF

    TPCF8306

    Contextual Info: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)


    Original     		TPCF8306 TPCF8306 PDF

    Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8301 PDF

    Contextual Info: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		TPCF8201 PDF

    TPCF8108

    Abstract: a2937
    Contextual Info: TPCF8108 MOSFET シリコンPチャネルMOS形 U-MOS TPCF8108 1. 用途 • リチウムイオン2次電池用 • パワーマネージメントスイッチ用 • ノートブックPC用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2)


    Original     		TPCF8108 TPCF8108 a2937 PDF

    TPCF8B01

    Contextual Info: TPCF8B01 東芝複合デバイス シリコンPチャネルMOS形 U-MOSIII ／ショットキバリア型 TPCF8B01 ○ ノートブック PC 用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。


    Original     		TPCF8B01 -200A) TPCF8B01 PDF

    A6583

    Abstract: TPCF8305
    Contextual Info: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)


    Original     		TPCF8305 A6583 TPCF8305 PDF

    TPCF8001

    Contextual Info: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.)


    Original     		TPCF8001 TPCF8001 PDF