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TPCF Equivalents
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TPCF Datasheets (75)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TPCF11CGPC0 (3-1437572-8) |
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Pushbutton Switches; TPCF11CGPC0=FLUSH PLUNGER PUSH ( Alcoswitch ) | Original | 462.23KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF11CGPC2 (3-1437572-9) |
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Pushbutton Switches; TPCF11CGPC2=TINY PUSH BUTTON ( Alcoswitch ) | Original | 462.23KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF11CGRA2 (4-1437572-1) |
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Pushbutton Switches; TPCF11CGRA2=PUSH BUTTON SWITCH ( Alcoswitch ) | Original | 462.23KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF11FGPC0 (4-1437572-2) |
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Pushbutton Switches; TPCF11FGPC0=FLUSH PLUNGER PUSH ( Alcoswitch ) | Original | 462.23KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF11FGPCES0 (4-1437572-3) |
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Pushbutton Switches; TPCF11FGPCES0=FLUSH PLUNGER PU ( Alcoswitch ) | Original | 237.49KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF13C0 (4-1437572-5) |
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Pushbutton Switches; TPCF13C0=FLUSH PLUNGER PUSHBUT ( Alcoswitch ) | Original | 462.23KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8001 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8001 |
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MOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (max 0.031) (max 0.023); I_S (A): (max 7) | Original | 283.1KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8001 |
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MOSFET TPC Series | Scan | 230.14KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8003 |
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Transistors - Mosfets | Original | 232.57KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8003 |
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Japanese - Transistors - Mosfets | Original | 288.47KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8003 |
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TPCF8003 - TRANSISTOR 7000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-3U1A, 8 PIN, FET General Purpose Small Signal | Original | 232.58KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8004 |
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Transistors - Mosfets | Original | 234.29KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8004 |
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Japanese - Transistors - Mosfets | Original | 324.35KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8004 |
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TPCF8004 - Nch VDSS =30V | Original | 234.3KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8101 |
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power MOSFET | Original | 182.19KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8101 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8101 |
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Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (max 0.085) (max 0.04) (max 0.028); I_S (A): (max -6) | Original | 254.76KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8101(TE85L,F,M |
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TPCF8101 - X35 PB-F POWER MOSFET TRANSISTOR VS-8 MOQ=4000 V=-12 PD=2.5W | Original | 223.16KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8101(TE85L,F,M |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A VS-8 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCF Price and Stock
Matrix Orbital EVE3-35G-BLM-TPC-F32GRAPHIC DISPLAY TFT RGB 3.5" |
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EVE3-35G-BLM-TPC-F32 | Box | 1 | 1 |
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TE Connectivity TPCF13C0SWITCH PUSH SPST-NO 1A 125V |
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TPCF13C0 | Bulk |
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NXP Semiconductors CWH-UTP-CF-HEUSB TAP HOST TARGET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CWH-UTP-CF-HE | Bulk | 1 |
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Toshiba America Electronic Components TPCF8B01(TE85L,F,MMOSFET P-CH 20V 2.7A VS-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPCF8B01(TE85L,F,M | Tape & Reel |
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Toshiba America Electronic Components TPCF8304(TE85L,F,MMOSFET 2P-CH 30V 3.2A VS-8 |
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TPCF8304(TE85L,F,M | Tape & Reel |
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TPCF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TPCF11CGRA2 Product Details Live Product Chat |
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TPCF11CGRA2 TPCF11CGRA2 | |
TPCF8402Contextual Info: TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) |
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TPCF8402 TPCF8402 | |
TPCF8301Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) |
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TPCF8301 TPCF8301 | |
toshiba f5d
Abstract: TPCF8304
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TPCF8304 toshiba f5d TPCF8304 | |
TPCF8201Contextual Info: TPCF8201 東芝電界効果トランジスタ シリコンＮチャネルMOS形 U-MOSIII TPCF8201 ○ 携帯電子機器用 単位: mm ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS(ON) = 38 mΩ (標準) |
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TPCF8201 TPCF8201 | |
2A101
Abstract: TPCF8101
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TPCF8101 2A101 TPCF8101 | |
TPCF8102Contextual Info: TPCF8102 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8102 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 24 mΩ (標準) |
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TPCF8102 TPCF8102 | |
MCV MOSFET
Abstract: TPCF8A01
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TPCF8A01 MCV MOSFET TPCF8A01 | |
TPCF8402Contextual Info: TPCF8402 シリコンP,NチャネルMOS形 U-MOS IV / U-MOS III 東芝電界効果トランジスタ TPCF8402 ○ 携帯電子機器用 単位: mm ○ モータドライブ用 ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 |
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TPCF8402 20070701-JA TPCF8402 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
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TPCF8102 TPCF8102 | |
TPCF8B01Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) |
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TPCF8B01 TPCF8B01 | |
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Contextual Info: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3) |
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TPCF8305 | |
TPCF8303Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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TPCF8303 TPCF8303 | |
TPCF8201
Abstract: ta202
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TPCF8201 TPCF8201 ta202 | |
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TPCF8103Contextual Info: TPCF8103 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8103 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 72 mΩ (標準) ( VGS =−4.5V) |
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TPCF8103 TPCF8103 | |
toshiba f5b
Abstract: TPCF8302 toshiba f5b data sheet
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TPCF8302 toshiba f5b TPCF8302 toshiba f5b data sheet | |
TPCF8102
Abstract: A2430
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TPCF8102 TPCF8102 A2430 | |
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Contextual Info: TPCF8105 MOSFETs Silicon P-Channel MOS U-MOS TPCF8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V) |
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TPCF8105 | |
TPCF8306Contextual Info: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) |
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TPCF8306 TPCF8306 | |
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Contextual Info: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TPCF11CGPC0 Product Details Live Product Chat |
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TPCF11CGPC0 TPCF11CGPC0 | |
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Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) |
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TPCF8301 | |
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Contextual Info: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) |
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TPCF8201 | |
TPCF8108
Abstract: a2937
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TPCF8108 TPCF8108 a2937 | |
TPCF8B01Contextual Info: TPCF8B01 東芝複合デバイス シリコンPチャネルMOS形 U-MOSIII ／ショットキバリア型 TPCF8B01 ○ ノートブック PC 用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 |
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TPCF8B01 -200A) TPCF8B01 | |