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onsemi MTP3055VLMOSFET N-CH 60V 12A TO220-3 | 
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MTP3055VL | Tube | 5,188 | 1 | 
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MTP3055VL | Tube | 550 | 19 Weeks | 50 | 
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MTP3055VL | 2,527 | 
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MTP3055VL | Bulk | 435 | 1 | 
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MTP3055VL | 221 | 
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MTP3055VL | 35 | 1 | 
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MTP3055VL | 1,600 | 
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MTP3055VL | 20 Weeks | 50 | 
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MTP3055VL | 21 Weeks | 50 | 
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MTP3055VL | 950 | 50 | 
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MTP3055VL | 950 | 
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Fairchild Semiconductor Corporation MTP3055VL | 
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MTP3055VL | 450 | 
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MTP3055VL | 4,602 | 1 | 
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MTP3055VL | 400 | 
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MTP3055VL | 712 | 10 | 
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Motorola Semiconductor Products MTP3055VL | 
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MTP3055VL | 126 | 
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MTP3055VL | 195 | 
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TP3055VL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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 Contextual Info: MOTOROLA Order this document by TP3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This  | 
 OCR Scan  | 
MTP3055VL/D TP3055VL 21A-06 |