TP 505 DIODE Search Results

MSW2000

Abstract: MSW2000-200
Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2000-200 & MSW2010-201 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 100 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power ( 500 W )

IGCT

Abstract: ka2 DIODE igct abb 11ka
Contextual Info: VRSM = 5200 V IFAVM = 810 A IFRMS = 1270 A IFSM = 10.5 kA VF0 = 0.90 V rF = 0.600 mΩ Ω Rectifier Diode 5SDD 08D5000 Target specification Doc. No. 5SYA1165-00 Sep. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number

UF diodes common anode

Contextual Info: ON Semiconductort MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: DEVELOPMENT DATA BR211 SERIES This data sheet contains advance information and specifications are subject to change without notice. SSE D • 7Z2ST~O S‘ ^ 5 3 1 3 1 0023255 0 ■ N AMER PHILIPS/DISCRETE BREAKOVER DIODES A range o f bidirectional diodes in hermetically sealed axial-leaded implosion-diode glass outlines w ith a

121000

Abstract: diode byt 45 alps 502 alps 503 a ALPS 102 Alps Electric vco D241 diode BYT 1000
Contextual Info: SGS-THOMSON B Y T 1 2 -1 0 0 0 FAST RECOVERY RECTIFIER DIODES • ■ ■ . VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-O FF SW ITCHING SUITABLE APPLICATIO N S ■ FREE W HEELING DIODE IN CONVERTERS

Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin

Contextual Info: BZG04-Series VISHAY Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • Glass passivated junction High reliability Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin

Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin

do214ac 9v1 zener

Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • High reliability Stand-off voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin. • AEC-Q101 qualified

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

CIE1931

Contextual Info: Opto Semiconductors Dimming InGaN LEDs by Hubert Ott and Ludwig Plötz, January 1999, Munich, Germany Introduction The first blue Light-Emitting Diodes LEDs were developed years ago. The active blue lightemitting material in these LEDs was pure SiC, and it had a very low light output. Later, GaN was

BZG04-10

Abstract: BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-8V2 BZG04-9V1
Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin

HL1323

Contextual Info: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm

D1265C5

Abstract: d1265 IDH12G65C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

Zener diodes

Abstract: color band BZV55 BZV55 sod-80 with blue band Z 3 M BZV55-C2V4 BZV55-C2V7 BZV55-C3V0 BZV55C15 BZV55-C3V6
Contextual Info: BZV55 Series Zener Voltage Range: 2.4 to 75 Volts Features Silicon Planar Power Zener Diodes. For use as low voltage stabilizer or voltage reference. The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance

Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • High reliability Stand-off voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin. • AEC-Q101 qualified

BZG04-10

Abstract: BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-8V2 BZG04-9V1 BZG04-18
Contextual Info: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin

5SLD0650J450300

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

011 545 77 26

Abstract: BZG04-9V1 BZG04-18, 135 BZG04-62 BZG04-10 BZG04-11 BZG04-12 BZG04-8V2
Contextual Info: TH97/10561QM BZG04- Series TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES SMA FEATURES : 5.3 ± 0.35 4.2 ± 0.25 1.3 ± 0.2 * High reliability * Stand-off Voltage range 8.2 V to 220 V * Excellent clamping cabability * Fast respon time typ. ≤ 1ps form 0 to VZmin

HL8318G

Contextual Info: HL8318G-Laser Diode Description HL8318G is a high-power 0.8 /um GaAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc m em ories and various other types of optical equip­ m ent. Single positive power supply is available for LD

Contextual Info: Certificate TH97/10561QM BZG04- Series Certificate TW00/17276EM ZENER DIODES SMA FEATURES : 5.4 ± 0.2 4.4 ± 0.2 1.3 ± 0.2 * High reliability * Stand-off Voltage range 8.2 V to 220 V * Excellent clamping cabability * Fast respon time typ. ≤ 1ps form 0 to V Zmin

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC