TOSHIBA WEEKLY CODE MARKING Search Results

TLP846

Contextual Info: TLP846 TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and

TE12L

Abstract: sot89 toshiba marking code TA76431F TA76431FR
Contextual Info: TA76431F/FR TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431F, TA76431FR Adjustable Precision Shunt Regulator Features • Precision Reference Voltage: VREF = 2.495 V ± 2% • Small Temperature Coefficient: |αVREF| = 46 ppm/°C • Adjustable Output Voltage: VREF ≤ VOUT ≤ 36 V

p841

Abstract: TLP841
Contextual Info: TLP841 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP841 Copiers, Printers and Fax Machines VCRs and CD Players Various Position Detection Sensor The TLP841 is photointerrupter which consists of a GaAs infrared LED and an Si phototransistor. With gap width as wide as 5mm, it is a compact package.

TA78DS05BP

Abstract: TA78DS05CP TA78DS06BP TA78DS08BP TA78DS09BP TA78DS10BP TA78DS12BP TA78DS15BP TA78DS05
Contextual Info: TA78DS05,06,08,09,10,12,15BP,05CP TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA78DS05BP, TA78DS06BP, TA78DS08BP, TA78DS09BP, TA78DS10BP, TA78DS12BP, TA78DS15BP, TA78DS05CP 5 V, 6 V, 8 V, 9 V, 10 V, 12 V, 15 V Low Dropout Voltage Regulator

p841

Abstract: TLP841 Toshiba phototransistor toshiba marking code transistor
Contextual Info: TLP841 TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP841 Copiers, Printers and Fax Machines VCRs and CD Players Various Position Detection Sensor The TLP841 is photointerrupter which consists of a GaAs infrared LED and an Si phototransistor. With gap width as wide as 5mm, it is a compact package.

TPCP8505

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

TPCS8303

Contextual Info: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

TPCP8504

Contextual Info: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain : hFE = 400 to 1000 IC = 0.2 A Low collector-emitter saturation : VCE (sat) = 0.12 V (max)

TPC8022-H

Abstract: TPC8022
Contextual Info: TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U−MOS III TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Unit: mm z Small footprint due to a small and thin package

U5ZA48C

Contextual Info: U5ZA48C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA48C Best Suited for Overvoltage Protection of Electronic System: Electronic System for Use in Automobiles Electronic System for Commercial Use Electronic System for Industrial Use For Communications, Controls, Measuring Instruments, etc.

TPCP8602

Contextual Info: TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications 0.05 M A 5 8 High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation: VCE (sat) = −0.2 V (max)

Contextual Info: TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications Unit: mm 0.33±0.05 High breakdown voltage: VCEO = −400 V 0.05 M A 5 8 Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V

TPCP8601

Contextual Info: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.05 M A 5 8 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)

a3180

Abstract: TPCS8303 TPCS83
Contextual Info: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

U5ZA40C

Contextual Info: U5ZA40C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA40C Best Suited for Overvoltage Protection of Electronic System: Electronic System for Use in Automobiles Electronic System for Commercial Use Electronic System for Industrial Use For Communications, Controls, Measuring Instruments, etc.

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

TPC8123

Contextual Info: TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.)

TPC8120

Contextual Info: TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.)

tpc8117

Abstract: toshiba marking code transistor
Contextual Info: TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅤ TPC8117 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.)

TPC8118

Abstract: TPC8118 application circuit
Contextual Info: TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅤ TPC8118 Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.)

TPC8121

Contextual Info: TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS V TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)

TPC8122

Abstract: M164
Contextual Info: TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅤ TPC8122 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.)

SF10J41

Contextual Info: SF10G41A, SF10J41A TOSHIBA Thyristor Silicon Planar Type SF10G41A, SF10J41A Medium-power control applications Unit: mm Repetitive peak off-state voltage: VDRM = 400 V, 600 V Repetitive peak reverse voltage: VRRM = 400 V, 600 V Average on-state current: IT AV = 10 A

toshiba weekly code marking

Contextual Info: SF5G41A, SF5J41A TOSHIBA Thyristor Silicon Planar Type SF5G41A, SF5J41A Medium-power control applications Unit: mm Repetitive peak off-state voltage: VDRM = 400 V, 600 V Repetitive peak reverse voltage: VRRM = 400 V, 600 V Average on-state current: IT AV = 5A