TOSHIBA WEEKLY CODE MARKING Search Results

114H1

Abstract: TLP842 "Photo Interrupter"
Contextual Info: TLP842 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP842 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Small-sized Personal OA Equipment The TLP842 is photointerrupter which consists of a GaAs infrared LED and an Si phototransistor.

TLP842

Contextual Info: TLP842 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP842 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP842 is photointerrupter which consists of a GaAs infrared LED and

TLP846

Contextual Info: TLP846 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and

Contextual Info: TLP846 TOSHIBA Photo-interrupter Infrared LED+Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and

Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

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Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)

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Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPCP8505

Abstract: BR 8505
Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

TPCP8504

Contextual Info: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 400 to 1000 IC = 0.2 A Low collector-emitter saturation : VCE (sat) = 0.12 V (max)

Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)

Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance

Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)

TLP846

Contextual Info: TLP846 TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP846 Still Camera and Digital Still Camera Video Camera Floppy Disk Drive Personal Equipment and Small-sized OA Equipment The TLP846 is photointerrupter which consists of a GaAs infrared LED and

Contextual Info: TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications High breakdown voltage: VCEO = −400 V 0.05 M A 5 8 Characteristics 2.4±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage

TPCP8601

Contextual Info: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 Strobo Flash Applications 0.05 M A 5 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) •

Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

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Contextual Info: TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications High breakdown voltage: VCEO = −400 V 0.05 M A 5 8 Characteristics 2.4±0.1 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage

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Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance

TPCP8501

Contextual Info: TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 100 to 300 IC = 0.3 A Low collector-emitter saturation : VCE (sat) = 0.2 V (max)

Contextual Info: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain : hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation : VCE (sat) = 0.12 V (max)

Contextual Info: TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain : hFE = 100 to 300 IC = 0.3 A Low collector-emitter saturation : VCE (sat) = 0.2 V (max)

Contextual Info: TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A Strobo Flash Applications 5 High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation: VCE (sat) = −0.2 V (max)

Contextual Info: TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications 0.05 M A 5 8 High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation: VCE (sat) = −0.2 V (max)