TOSHIBA PNP RN Search Results

Contextual Info: TOSHIBA RN2301-RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design

Contextual Info: TOSHIBA RN2114-RN2118 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2114, RN2115, RN2116, RN2117, RN2118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6+0.2 • With Built-in Bias Resistors •

Contextual Info: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design

Contextual Info: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors

nj TRANSISTOR

Contextual Info: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors

RN4605

Contextual Info: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -

Contextual Info: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)

Contextual Info: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design

RN2223

Abstract: ko iq
Contextual Info: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)

RN4603

Contextual Info: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •

Contextual Info: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5

transistor 2204

Contextual Info: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors

TRANSISTOR MARKING YB

Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
Contextual Info: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)

Contextual Info: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design

YC 2604

Abstract: toshiba Yb YC+2604
Contextual Info: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)

Contextual Info: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors

toshiba pnp rn

Abstract: RN2314-RN2318
Contextual Info: RN2314-RN2318 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2.1 + 0 1 .1.25+0.1 • W ith Built-in Bias Resistors

Contextual Info: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •

Contextual Info: TOSHIBA RN4986 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 (Ultra Super Mini Type

Contextual Info: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type

LM 1709

Contextual Info: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !

Contextual Info: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors

2607 transistor

Abstract: 26-07 transistor 2609 N2609
Contextual Info: TOSHIBA R N 2607-R N 2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)

RN25U

Contextual Info: TOSHIBA RN2501-RN2506 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2501, RN2502, RN2503, RN2504, RN2505, RN2506 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm Including Two Devices in SMV (Super Mini Type with 5 leads)