TOSHIBA MARKING MC Search Results

GT20J121

Abstract: gt20j1
Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

TPCF8104

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

TPC6107

Contextual Info: TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC6107 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)

TPCF8001

Contextual Info: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.)

TPC6105

Contextual Info: TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPCF8303

Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)

TPC6104

Contextual Info: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)

DIODE S3l

Abstract: TPC6111 s3l 02 diode S3L diode s3l marking
Contextual Info: TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSV TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −20 V)

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPCF8301

Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPC6003

Abstract: marking CODE 001
Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

TPC6005

Contextual Info: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

GT40J121

Contextual Info: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

Contextual Info: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK39J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)

Contextual Info: TJ80S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ80S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V)

Contextual Info: TK65S04K3L MOSFETs Silicon N-channel MOS U-MOS TK65S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK15S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK15S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 13.7 mΩ (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

Contextual Info: TJ40S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ40S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)

Contextual Info: TK45S06K3L MOSFETs Silicon N-channel MOS U-MOS TK45S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK30S06K3L MOSFETs Silicon N-channel MOS U-MOS TK30S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) (VGS = 10 V)