TOSHIBA MARKING MC Search Results

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Fronted IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

MURATA GRM15

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

Contextual Info: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)

SAFDA243MRD

Abstract: SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243
Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

10G131

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

Contextual Info: TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.)

PW-Mold

Contextual Info: TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A)

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

TTA005

Contextual Info: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)

Contextual Info: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)

Contextual Info: TTC008 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC008 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High collector-emitter voltage: VCEO = 285 V, VCES = 600 V

Contextual Info: TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC6110 Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −30 V)

Contextual Info: TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

TPCF8002

Contextual Info: TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS Ⅳ TPCF8002 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPCF8003

Contextual Info: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)

Contextual Info: TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2)

Contextual Info: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V

ttC014

Contextual Info: TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features 1 High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2)

GT20J121

Abstract: gt20j1
Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

Contextual Info: TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS TPCF8003 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) =14 m •

Contextual Info: TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSV TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −20 V)

TA76431S

Abstract: ta76 ta76 "pin compatible" LSTM ta76*431s ta76 431s
Contextual Info: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V

431s

Abstract: ta76 ta76 ic TA76431S TA76431S equivalent
Contextual Info: TA76431S TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431S Adjustable Precision Shunt Regulator Features z Precision reference voltage: VREF = 2.495 V ± 2.2% z Small temperature coefficient: |αVREF| = 46 ppm/°C z Adjustable output voltage: VREF ≤ VOUT ≤ 36 V