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    TOSHIBA MARKING CODE TRANSISTOR Search Results

    TOSHIBA MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy
    5962-8672601FA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy

    TOSHIBA MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING S3H TRANSISTOR

    Abstract: TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 MARKING S3H TRANSISTOR TPC6108 PDF

    TPCF8103

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8103 TPCF8103 PDF

    TPC8003

    Contextual Info: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		TPC8003 TPC8003 PDF

    TPCS8006

    Contextual Info: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •


    Original     		TPCS8006 TPCS8006 PDF

    TPC8006

    Abstract: TPC8006-H
    Contextual Info: TPC8006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed U−MOSII TPC8006−H High-Speed and High-Efficiency DC−DC Applications Portable Equipment Applications Notebook PC Applications Converter Unit: mm Small footprint due to small and thin package


    Original     		TPC8006-H TPC8006 TPC8006-H PDF

    10g131

    Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
    Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170 PDF

    igbt transistor

    Abstract: 8g133
    Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		GT8G133 dissipationt10 igbt transistor 8g133 PDF

    S3H 02 diode

    Abstract: TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 S3H 02 diode TPC6108 PDF

    TPC8104-H

    Contextual Info: TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High-Speed U−MOSII TPC8104−H High-Speed and High-Efficiency DC−DC Applications Converter Unit: mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package


    Original     		TPC8104-H TPC8104-H PDF

    TPC8105-H

    Abstract: TPC8105
    Contextual Info: TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High-Speed U−MOSII TPC8105−H High-Speed and High-Efficiency DC−DC Applications Converter Unit: mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package


    Original     		TPC8105-H TPC8105-H TPC8105 PDF

    8G133

    Abstract: GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark
    Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		GT8G133 dissipationt10 8G133 GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark PDF

    TPCF8201

    Contextual Info: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		TPCF8201 TPCF8201 PDF

    TPC6103

    Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		TPC6103 TPC6103 PDF

    TPCF8302

    Contextual Info: TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8302 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.)


    Original     		TPCF8302 TPCF8302 PDF

    TPC6003

    Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		TPC6003 TPC6003 PDF

    TPCF8104

    Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)


    Original     		TPCF8104 TPCF8104 PDF

    TPC6107

    Contextual Info: TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC6107 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)


    Original     		TPC6107 TPC6107 PDF

    TPCF8001

    Contextual Info: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.)


    Original     		TPCF8001 TPCF8001 PDF

    TPC6105

    Contextual Info: TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPC6105 TPC6105 PDF

    tpc6004

    Contextual Info: TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6004 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPC6004 tpc6004 PDF

    TPC6110

    Abstract: MARKING s3k
    Contextual Info: TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC6110 Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −30 V)


    Original     		TPC6110 TPC6110 MARKING s3k PDF

    TPC6109-H

    Abstract: TPC6109
    Contextual Info: TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Ultra-High-Speed U-MOSIII TPC6109-H High-Efficiency DC/DC Converter Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)


    Original     		TPC6109-H TPC6109-H TPC6109 PDF

    TPCF8303

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 TPCF8303 PDF

    TPC6104

    Contextual Info: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		TPC6104 TPC6104 PDF