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    TOSHIBA MARKING CODE TRANSISTOR Search Results

    TOSHIBA MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TOSHIBA MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING S3H TRANSISTOR

    Abstract: DIODE S3H S3H MARKING S3H 02 diode TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPC6108 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 MARKING S3H TRANSISTOR DIODE S3H S3H MARKING S3H 02 diode TPC6108 PDF

    TPCT4204

    Abstract: marking code SSs
    Contextual Info: TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit: mm • Lead(Pb)-Free • Small footprint due to small and thin package • Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)


    Original     		TPCT4204 TPCT4204 marking code SSs PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 PDF

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 PDF

    toshiba f5b

    Abstract: TPCF8303
    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 toshiba f5b TPCF8303 PDF

    toshiba weekly code marking

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 toshiba weekly code marking PDF

    cha marking code

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 cha marking code PDF

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 PDF

    Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		GT8G136 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 PDF

    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 PDF

    TPCF8303

    Abstract: toshiba f5b
    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 TPCF8303 toshiba f5b PDF

    8g136

    Abstract: toshiba week code marking
    Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


    Original     		GT8G136 dissipationt10 8g136 toshiba week code marking PDF

    Contextual Info: TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.)


    Original     		TPC6012 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 PDF

    Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		TPC8203 PDF

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		TPCF8103 PDF

    Contextual Info: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 Unit: mm High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 5 • High DC current gain: hFE = 200 to 500 (IC = −0.6 A)


    Original     		TPCP8601 PDF

    Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		TPC8012-H PDF

    MARKING S3H TRANSISTOR

    Abstract: TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 MARKING S3H TRANSISTOR TPC6108 PDF

    TPCF8103

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8103 TPCF8103 PDF

    TPC8003

    Contextual Info: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		TPC8003 TPC8003 PDF

    Contextual Info: TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain • Low collector-emitter saturation voltage : VCE sat = -0.23 V (max) High-speed switching : tf = 70 ns (typ.)


    Original     		TPC6604 PDF