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    TOSHIBA MARKING CODE TRANSISTOR Search Results

    TOSHIBA MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy
    5962-8672601FA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy

    TOSHIBA MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING S3H TRANSISTOR

    Abstract: DIODE S3H S3H MARKING S3H 02 diode TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPC6108 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 MARKING S3H TRANSISTOR DIODE S3H S3H MARKING S3H 02 diode TPC6108 PDF

    TPCT4204

    Abstract: marking code SSs
    Contextual Info: TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit: mm • Lead(Pb)-Free • Small footprint due to small and thin package • Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)


    Original     		TPCT4204 TPCT4204 marking code SSs PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 PDF

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 PDF

    toshiba f5b

    Abstract: TPCF8303
    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 toshiba f5b TPCF8303 PDF

    toshiba weekly code marking

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 toshiba weekly code marking PDF

    cha marking code

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 cha marking code PDF

    Contextual Info: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		TPCS8102 PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 PDF

    Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		GT8G136 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 PDF

    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 PDF

    TPCF8303

    Abstract: toshiba f5b
    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TPCF8303 TPCF8303 toshiba f5b PDF

    8g136

    Abstract: toshiba week code marking
    Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


    Original     		GT8G136 dissipationt10 8g136 toshiba week code marking PDF

    Contextual Info: TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.)


    Original     		TPC6012 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		TPC8303 PDF

    Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		TPC8203 PDF

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		TPCF8103 PDF

    Contextual Info: TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process TPCP8601 Unit: mm High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 5 • High DC current gain: hFE = 200 to 500 (IC = −0.6 A)


    Original     		TPCP8601 PDF

    Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		TPC8012-H PDF

    MARKING S3H TRANSISTOR

    Abstract: TPC6108
    Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)


    Original     		TPC6108 MARKING S3H TRANSISTOR TPC6108 PDF

    TPCF8103

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		TPCF8103 TPCF8103 PDF

    TPC8003

    Contextual Info: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		TPC8003 TPC8003 PDF

    Contextual Info: TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain • Low collector-emitter saturation voltage : VCE sat = -0.23 V (max) High-speed switching : tf = 70 ns (typ.)


    Original     		TPC6604 PDF