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    TOSHIBA K2604 Search Results

    TOSHIBA K2604 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
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    TOSHIBA K2604 Datasheets Context Search

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    K2604

    Abstract: toshiba transistor k2604 toshiba k2604 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original
    2SK2604 K2604 toshiba transistor k2604 toshiba k2604 2SK2604 PDF

    K2604

    Abstract: 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original
    2SK2604 K2604 2SK2604 PDF

    toshiba k2604

    Abstract: toshiba transistor k2604 K2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original
    2SK2604 toshiba k2604 toshiba transistor k2604 K2604 PDF

    K2604

    Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original
    2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604 PDF