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    TOSHIBA B1495 Search Results

    TOSHIBA B1495 Result Highlights (5)

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    TOSHIBA B1495 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original
    2SB1495 2SD2257 PDF

    b1495

    Abstract: 2SB1495 2SD2257
    Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original
    2SB1495 2SD2257 b1495 2SB1495 2SD2257 PDF

    B1495

    Abstract: 2SB1495 2SD2257
    Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original
    2SB1495 2SD2257 B1495 2SB1495 2SD2257 PDF

    toshiba b1495

    Contextual Info: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original
    2SB1495 2SD2257 2-10R1A toshiba b1495 PDF