TOHO ELECTRONICS INC Search Results

D28C04

Abstract: 6023B upd28c04 PD28C04
Contextual Info: N E C ELECTRONI CS NEC INC blE D L.427525 DD3S417 NEC Electronics Inc. Description Pin Configuration The jl/PD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced

D28C05

Abstract: AIPD28C05 fjs 500
Contextual Info: N E C ELECTRONICS INC bl E T> • bM27S2S 003542b fk fM ä Y " MET * N E C E fiPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. 1 3 ' 2 ? Description Pin Configuration The fjPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512

Contextual Info: HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal

6023B

Abstract: PD28C04 ho27a
Contextual Info: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga­ nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power

KM416C64

Contextual Info: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption

TAF200

Abstract: sendust tdk ferrite cores for smps iron eddy current hysteresis loss micrometals Arnold Magnetics 75H-TAF200 75-TAF200 dimmer chokes iron core transformer
Contextual Info: Powder Cores / Distributed Gaped Core Selection Guide Introduction This application guide presents some general guidelines for the optimum choice of powder core materials MPP, Sendust/Kool Mu1, High Flux or Iron Powder for different inductor, choke and filter design requirements. The choice of one

Contextual Info: Chopper Regulators PQtCF2 PQ1CF2 TO-220 Type Chopper Regulator • Features ■ Outline Dimensions U n it. m m • • • • Maximum switching current: 1.5A Built-in ON/OFF control function Built-in soft start function Built-in oscillation circuit (oscillation frequency:TYP.100kHz)

HK-12S120-1010

Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
Contextual Info: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).

A1029

Abstract: kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor
Contextual Info: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

Contextual Info: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).

switching regulator 12v

Abstract: matsushita film capacitor ECQ SBT250-06J TN5D51 2200uf 3A capacitor capacitor 2200uf 35v 2200uF 100v capacitor Nippon Chemi-Con kze capacitor electrolytic capacitor 2200uF SANYO
Contextual Info: TN5D51 Ordering number : ENA0865 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).

tn8d51a

Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
Contextual Info: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).

Contextual Info: HY51V S 16400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY ESCRIPTION The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high

FILM CAPACITOR 0.1/10/100

Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
Contextual Info: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

kze capacitor

Abstract: thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram
Contextual Info: TN5D61A Ordering number : ENA1240 SANYO Semiconductors DATA SHEET TN5D61A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (24V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

capacitor 2200uf 35v

Abstract: electrolytic capacitor 2200uF SANYO Nippon Chemi-Con kze capacitor film capacitor 0.1uf 100v nippon kmg capacitor 2200uF/35V switching regulator 12v mosfet protection circuit diagram nippon kze HK-12S120-1010
Contextual Info: TN7D51 Ordering number : ENA0866 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN7D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ).

matsushita resistor network

Contextual Info: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

Contextual Info: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high

matsushita resistor network

Contextual Info: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D01A Separately-Excited Step-Down Switching Regulator (Variable Output Type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

kze capacitor

Abstract: ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network
Contextual Info: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).

kze capacitor

Abstract: matsushita film capacitor ECQ SBT250-06J TN5D41 2200uf 3A capacitor 2wl1 electrolytic capacitor 2200uF SANYO capacitor 2200uF/35V
Contextual Info: TN5D41 Ordering number : ENA0863 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D41 Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).

Contextual Info: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).

HY51V65803HG

Contextual Info: HY51V S 65803HG/HGL 8M x 8Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 8,388,608 x 8 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

Contextual Info: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).