TO220D Search Results

m MA643

Abstract: MA689 ir d10 ir d10-D10 ma752 MA7D50 MA7D61 MA555 MA649 MA652
Contextual Info: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Main Characteristics (Ta = 2 5 "C) Type No. Category A A A Vr I f(AV) (V) (A) Main Characteristics (Ta =2 5 °C) Package Category Ir ter * Vf max.(V) typ.(ns) ■ Fast Recovery Diodes (FRD) No.

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK3043

Contextual Info: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

2SK3045

Abstract: DSA003714
Contextual Info: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2

IGBT 2pg011

Abstract: 2PG011
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF31 Silicon mesa type For high frequency rectification • Package  Super high speed switching characteristic: trr = 20 ns (typ.)  Low noise type  Code

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC4898

Contextual Info: Power Transistors 2SC4898 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Collector to base voltage VCBO 1 000 V Collector to emitter voltage

Contextual Info: ¿ ^ S E M | J T E C H COMBINATION SWITCHING CONTROLLER AND LOW DROPOUT REGULATOR April 8, 1998 SC113X TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1131/2/3/4 incorporates a high current low dropout linear regulator section together with a

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

Contextual Info: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3D650 (MA6D50) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D756 (MA7D56) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features 15.0±0.5 φ 3.2±0.1 ■ Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D798 (MA10798) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D760 (MA7D60) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed

Contextual Info: Schottky Barrier Diodes SBD MA3D761 (MA7D61) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip • Low forward voltage VF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

2sd2693

Contextual Info: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage