TO220AB CHANNEL P Search Results

TRANSISTOR BUK9508

Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BUK9535-55A

Abstract: transistor smd 26 BUK953555A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

SBR20A120CTFP

Abstract: SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5
Contextual Info: DIO 2040 SBR brochure Final Artwork 25/2/10 10:45 Page 1 SBR THE NEXT GENERATION OF RECTIFIERS. www.diodes.com DIO 2040 SBR brochure (Final Artwork) 25/2/10 10:45 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

IRF9Z10

Abstract: DIODE NU
Contextual Info: PD - 90459A IRF9Z10 D G D S TO-220AB www.irf.com G D S Gate Drain Source 1 06/24/05 IRF9Z10 2 www.irf.com IRF9Z10 www.irf.com 3 IRF9Z10 4 www.irf.com IRF9Z10 www.irf.com 5 IRF9Z10 6 www.irf.com IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

IRFZ10

Contextual Info: PD - 90440A IRFZ10 D G D S TO-220AB Document Number: 90363 G D S Gate Drain Source 06/24/05 www.vishay.com 1 IRFZ10 Document Number: 90363 www.vishay.com 2 IRFZ10 Document Number: 90363 www.vishay.com 3 IRFZ10 Document Number: 90363 www.vishay.com 4 IRFZ10

Contextual Info: Preliminary Datasheet RJK0703DPN-E0 R07DS0624EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 75 V, 70 A, 6.7 m Features •    High speed switching Low drive current Low on-resistance RDS on = 5.3 m typ. (at VGS = 10 V) Package TO-220AB Outline

diode IR 132 E

Abstract: DIODE NU
Contextual Info: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A

gd79

Abstract: Hitachi 2SJ Hitachi DSA002751
Contextual Info: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A

D1459

Abstract: 2sk3430 equivalent 2SK3430-Z 2SK3430 2SK3430-S MP-25 MP-25Z in 3003 TRANSISTOR
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-Z

2SK3434

Abstract: 2SK3434-S 2SK3434-Z MP-25 MP-25Z
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262

2sk2251

Contextual Info: 2SK2251-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

Contextual Info: 2SK2025-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

2SK952

Contextual Info: 2SK952 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters

MP-25

Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

NP24N10CLB

Abstract: MP-25 NP24N10DLB NP24N10ELB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

d1409

Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

D1406

Abstract: 2SK3294 2SK3294-S 2SK3294-ZJ MP-25 c4006
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3294 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

2SK3305

Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263

Contextual Info: 2SK1981-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

Contextual Info: 2SK1986-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators