TO220 AMPS 1200 V Search Results

LT 220 diode

Contextual Info: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0

BRX49 equivalent

Abstract: BRX49 BRX49 pinout 2n1771 data sheet 2N4172 2N1778 circuit G C106B1 2N3670 2n3668 C103B
Contextual Info: SCRs Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 CASE TO-18 TO-92 Pinout Pinout CGA AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885

z18a

Abstract: DIODE RECTIFIER press fit z30 LT 7210 Z41B ecg rectifier diode HR-29 ECG5994 ecg597 ECG5800 ecg599
Contextual Info: P H I L IP S E C G INC Industrial Rectifiers Peak Reverse Voltage P R V Volts 50 3A 50 200 Note: Standard polarity is cathode to case. * Indicates polarity is anode to case. 6A 15 A 16 A 20 A ECG5870 ECG5940 ECG5892 ECG5912 ECG5831* ECG5851* ECG5871* ECG5941*

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

CLA60MT1200NHR

Abstract: triac design CLA30MT1200NPB CLA40MT1200NPB CMA60MT1600NHR
Contextual Info: N E W P R O D U C T B R I E F New High Performance DT-Triac Technology Platform HIGH VOLTAGE & CURRENT DT-TRIAC™ May 2014 Overview: IXYS Corporation NASDAQ: IXYS , a leader in power semiconductors and integrated circuits technologies for energy efficient products used in power conversion and motor control

600 volt mosfet

Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
Contextual Info: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the

E81734

Abstract: bhk3012tv STTH6003CW STTA3006PI BHK3012 STTA512F BHA3012TV STTH3003CW 5 Amps Diode STTH20003TV1
Contextual Info: POWER RECTIFIERS TURBOSWITCHTM DIODES TO220AC ISOWATT220AC TO-220AB TO-220AC Ins. UL E81734 (N) ISOWATT220 AND TO220 TYPE TURBOSWITCH RECTIFIERS Voltage (max) 300 Volts * 600 Volts Current Part Number 8 Amps 2 x 10 Amps 5 Amps STTH803D STTH2003CT STTA506D

2N3670

Abstract: 2N3668 2N3669 2n4103 2n682 2N681 CS220-25M 2N687 2N683 2N684
Contextual Info: SCRs Continued IT (AMPS) 16 25 @ TC ( C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 TO-220 TO-48 TO-220 o TO-3 50 mil CASE VRRM (VOLTS) 25 2N681,A 50 2N682,A 100 2N3668 2N683,A 150 200 2N684,A 2N3669 CS3-16B CS220-16B* 2N685,A 250 2N686,A 300 2N687,A

2N3670

Abstract: 2N4103 2N3668 2N688A CS220-16B 2N3669 2N681 2N682 2N683 2N684
Contextual Info: SCRs Continued It (AMPS) 16 25 @ T c (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 ( K ä & I - uUU CASE TO-3 TO-220 TO-48 f TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A*

2N692

Contextual Info: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*

2N3668

Contextual Info: SCRs Continued It (AMPS) 16 25 @ Tc (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (9 (K - ~ j ) ^ ä Ä IS u uu CASE TO-3 TO-220 TO-48 90 f 250 TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B* 2N685.A*

1200v 3A

Contextual Info: APT1204R7KLL 1200V 3A 4.70W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT1204R7KFLL

Abstract: apt1204r7 APT1204R7KF
Contextual Info: APT1204R7KFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1204R7KLL

Abstract: apt1204r7
Contextual Info: APT1204R7KLL 1200V 3.5A 4.70Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT15S20KCT

Abstract: APT20M36BLL
Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT G 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode

25CC

Abstract: MJE18206 MJF18206 J280 LB013
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

Contextual Info: APT1204R7KFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT G 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

rectifier ds3

Contextual Info: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

APT15S20KCT

Abstract: APT20M36BLL
Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT 1 200V 2X25A 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

AL 60 dv 1419

Contextual Info: 4A554S3 0015*134 034 • International ;i»r Rectifier HEXFET Power MOSFET • • • • INR PD-9.849 IRLIZ44G INTERNATIO NAL R E C T IF IE R bSE I> Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

mur reverse voltage 1200 V

Abstract: 1660CT MUR1660CT
Contextual Info: MUR16xCT Series Features: • • • • • • • • Ultrafast 35 and 60 Nanosecond Recovery times. 175°C operating Junction Temperature. Popular TO-220 Package. Epoxy meets UL94, V0 at 1/8 inch. High temperature glass passivated junction. High voltage capability to 600 volts.