TO-94 PACKAGE Search Results

HIGH VOLTAGE THYRISTOR

Abstract: THYRISTOR MODULE IXYS MCC 94 94-22io1B
Contextual Info: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr PGM Maximum Ratings

A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Contextual Info: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C

60395 xicor

Abstract: QML-38535 5962-3826705MXA AT28C010 5962-38267 5962-3826703MXA 5962-3826703 5962-3826701 CQCC1-N44
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Add packages T and W. Add vendor CAGE 60395 as source of supply. Increase data retention to 20 years, minimum. Redrawn with changes. 93-06-29 M. A. Frye B Changes in accordance with NOR 5962-R139-94. 94-03-29

GDIP1-T28

Abstract: qml38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with NOR 5962-R229-94. 94-08-11 M. A. FRYE Changes to table I. Editorial changes throughout. - drw 98-03-17 R. MONNIN Make change to input bias current test as specified in table I. - ro

FS791

Abstract: FS792 FS794 IMIFS791BZ 40-70MHZ
Contextual Info: 92/94 FS791/92/94 Low EMI Spectrum Spread Clock Features Applications • Spread Spectrum Clock Generator SSCG with 1x, 2x and 4x outputs • 80- to 140-MHz operating frequency range • Modulates external clocks including crystals, crystal oscillators, and ceramic resonators

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

920122

Abstract: qml38535 MIL-STD-973 5962-9082506MYA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Technical changes in table I. Changes to figure 1 dimensions. Editorial changes throughout. 93-08-25 M. A. FRYE B Changes in accordance with N.O.R. 5962-R063-94. 94-07-15 M. A. FRYE C Drawing updated to reflect current requirements. - ro

5962-9234701MPA

Abstract: 5962-9234703VHA qml-38535 AD9696 AD9698 GDFP1-F10 GDIP1-T16 eze3 5962-9234703VPA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Delete input offset voltage temperature coefficient test and make change to input voltage range test as specified under T ABLE I. In accordance with N.O.R. 5962-R221-94. 94-06-28 M. A. FRYE Make change to terminal connections as specified under FIGURE 3.

Contextual Info: FDP33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

qml38535

Abstract: 5962-9084201MGA LT1012MD/883 LT1012A
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R180-94. 94-06-14 M. A. FRYE B Drawing updated to reflect current requirements. - ro 00-09-15 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.

qml38535

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change in accordance with N.O.R. 5962-R238-94. 94-07-27 M. A. FRYE B Add case outline X. Editorial changes throughout. Redrawn. 95-07-10 M. A. FRYE C Drawing updated to reflect current requirements. - ro

Contextual Info: FDB33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

qml-38535

Abstract: CLC505 5962-9099301MPC 1112LR
Contextual Info: REVISIONS LTR DESCRIPTION DA TE YR-MO-DA APPROVED Make changes to 1.3 and Iq q test in table I. In accordance with N.O.R. 5962-R132-93. 93-05-05 M. A. FRYE Make changes to Vgy-p and N.O.R. 5962-R141-94. 94-03-31 M. A. FRYE Make change to CMRR test in table I. In accordance with

ha1-5190

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R220-93. 93-08-26 M. A. FRYE B Changes in accordance with N.O.R. 5962-R153-94. 94-04-29 M. A. FRYE C Drawing updated to reflect current requirements. - ro 00-06-02

Contextual Info: MCOTS-C-28E-28-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 28V Output 14A Output 94%@7A/94%@14A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings

GDFP1-G10

Abstract: E418 qml38535 qml-38535 Defense/GDFP1-G10
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device types 02 through 06. Add vendor CAGE 64155. Change CAGE code to 67268. 88-06-28 M. A. FRYE B Changes in accordance with N.O.R. 5962-R104-94. 94-02-24 M. A. FRYE C Add case outline Y. Make changes to 1.2.2, 1.3, 3.2.1, figure 1, and figure 2.

Contextual Info: TOSHIBA T O T X I 94 FIBER OPTIC TRANSM ITTING M O D U LE T O T X 1 94 FIBER OPTIC TRANSM ITTING M O D U LE FOR U nit in mm SIM PLEX DIGITAL SIGNAL TRAN SM ISSIO N • Data rate : DC to 10Mb/ s NRZ code • Transmission distance : Up to 1000m • TTL interface

PK128

Abstract: PSC4045 2N100 d809
Contextual Info: REVISIONS DWG § PK100-1 DWG # JEDEC VARIATION MIN NOM MAX - - 1.60 A1 .05 .10 A2 1.35 1.40 A □ T E DESCRIPTION DATE APPROVED INITIAL RELEASE DB/09/94 T. VU 273B9 D1 REDRAW TO JEDEC FORMAT 12/12/94 PK128- BX MIN NOM MAX - - 1.60 .15 .05 .10 .15 1.45 1.35

qml38535

Abstract: 5962-R025-94
Contextual Info: REVISIONS LTR DESCRIPTION A B DATE YR-MO-DA APPROVED 94-02-24 09-08-19 M. A. FRYE C. SAFFLE Changes in accordance with NOR 5962-R025-94. Drawing updated to reflect current requirements. Redrawn. -rrp REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B

5962-9326702MPA

Abstract: 5962-9326705M2C qml-38535 5962-9326704M2C MAX705MJA/883B smd marking 1331 MAX706 MAX707 MAX708 MAX813
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R244-94. 94-07-22 M. A. FRYE B Drawing updated to reflect current requirements. –rrp 02-10-22 R. MONNIN REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B OF SHEETS

Contextual Info: EN-0 IC 032 MXJ-32 LG no o I CM CM LD i d Q : 00 o O V A NOTES A s a a iv v a a a a a LENGTH TO CONTACT POINT. T E A MATERIAL Q 94 94 -0 94 -0 9 4 1 1 05 0 0 5 0 2 5 1TIN-BISM UTH 1.07 MICROMETER 1 0 MINIMUM T W V -7 A E 7 46 46 U F V : A t'v v : NYLON, UL VV P S ,

Contextual Info: EN-0 IC 032 MXJ-32 LG no o I CM CM LD i d Q : 00 o O V A NOTES A s a a iv v a a a a a LENGTH TO CONTACT POINT. T E A MATERIAL Q 94 94 -0 94 -0 9 4 1 1 05 0 0 5 0 2 5 1TIN-BISM UTH 1.07 MICROMETER 1 0 MINIMUM T W V -7 A E 7 46 46 U F V : A t'v v : NYLON, UL VV P S ,

T50 thyristor

Contextual Info: nixYS High Voltage Thyristor Module MCC94 ITRMS TAVM = 2x180 A = 2x104 A V RRM = 2000/2200 V v RSM v RRM VDSM V DRM V 671 Type 54 2 TO-240 AA V 2100 2300 2000 2200 Symbol MCC 94-20ÌO1 B MCC 94-22io1 B Test Conditions Maximum Ratings TVJ "^"vjM T0 = 85°C; 180° sine